Toshiba TPC6003 User Guide
Summary
High-efficiency N-Channel MOS Field Effect Transistor ideal for advanced power switching in portable electronics and personal computing applications, such as notebooks. This manual serves as a comprehensive technical guide, detailing crucial electrical characteristics, deep thermal performance ratings, and operational specifications. It is essential reading for system engineers and circuit designers integrating reliable, high-performance semiconductor components into general consumer electronic product designs.
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TPC6003
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6003
Notebook PC Applications
Unit: mm
Portable Equipment Applications
Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V Drain-gate voltage (RGS 20 k) VDGR 30 V Gate-source voltage VGSS 20 V
(Note 1)
Drain current
Pulse
IDP 24
JEDEC ―
(Note 1)
Drain power dissipation (t 5 s) JEITA ―
PD 2.2 W
(Note 2a) TOSHIBA 2-3T1A
Drain power dissipation (t 5 s)
Weight: 0.011 g (typ.)
PD 0.7 W
(Note 2b)
Single pulse avalanche energy (Note 3) EAS 5.8 m J Avalanche current IAR 3 A Circuit Configuration Repetitive avalanche energy (Note 4) EAR 0.22 m J
Channel temperature Tch 150 °C Storage temperature range Tstg 55 to 150 °C
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient
Rth (ch-a) 56.8 °C/W Marking (Note 5)
(t 5 s) (Note 2a) Thermal resistance, channel to ambient
Rth (ch-a) 178.5 °C/W
(t 5 s) (Note 2b)
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatically sensitive device. Please handle it with caution.
Page Summary Contents For Toshiba TPC6003 User Guide
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 6 |
| File Size | 152.89 KB |
| Published | May 31, 2026 |
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Frequently Asked Questions
What is the maximum operating temperature for this transistor?
The channel temperature (Tch) can reach up to 150°C.
How is the device mounted on different boards?
It can be mounted on glass-epoxy boards, either FR-4 or specialized boards specified by the note columns.
What circuit condition determines its power dissipation rating?
Drain power dissipation listed for t=5s depends on whether the device is mounted on an 'a' (glass-epoxy board) or 'b' (FR-4) type substrate.
What precautions must be taken when handling this component?
It is categorized as an electrostatically sensitive device and requires cautious handling. Users must also comply with safety standards for the entire system design.