Toshiba TPC8004 User Guide
Summary
This N Channel MOSFET is an advanced semiconductor component designed for high-efficiency power management in portable applications. Featuring low drain-source ON resistance, small footprint, and reduced leakage current, it is ideal for optimizing battery life in notebook PCs and lithium-ion battery systems. The accompanying manual provides comprehensive details on electrical characteristics, thermal performance guidelines, and safe handling requirements for system designers developing consumer and industrial electronics.
Page 1 Text Content
TPC8004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
TPC8004
Lithium Ion Battery Applications
Unit: mm
Portable Equipment Applications Notebook PC Applications
Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.) High forward transfer admittance : |Yfs| = 6 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V
DC (Note 1) ID 5
Drain current JEDEC ―
Pulse (Note 1) IDP 20
JEITA ―
Drain power dissipation (t = 10 s) (Note 2a) PD 2.4 W
TOSHIBA 2-6J1B
Drain power dissipation (t = 10 s)
(Note 2b) PD 1.0 W Weight: 0.080 g (typ.)
Single pulse avalanche energy (Note 3) EAS 32.5 m J Avalanche current IAR 5 A Circuit Configuration Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.24 m J Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TPC8004 User Guide
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 511.86 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
Is this transistor sensitive to static electricity when handling?
Yes, this transistor is an electrostatic sensitive device and requires careful handling.
What is the maximum drain-source voltage rating for the TPC8004?
The maximum drain-source voltage (Vds) rating is 30 V.
What key performance factor relates to heat dissipation?
For standard operation, the thermal resistance from channel to ambient (Rth(ch-a)) can be 52.1 °C/W (for t=10 s).
Can I use this product in mission-critical or life support equipment?
No. These products are for general electronics applications and are not warranted for equipment requiring extraordinarily high reliability, such as medical instruments or aircraft systems.