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Toshiba TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (C-Band) Data Handbook

Summary

This high-performance Microwave Power GaAs FET is designed for robust amplification in C-Band frequency applications (7.7–8.5 GHz), offering exceptional power output combined with very low intermodulation distortion. Ideal for professional engineers developing sensitive communication and microwave equipment, this component ensures superior signal integrity. The manual provides comprehensive coverage of key RF performance specifications, electrical characteristics, and thermal ratings necessary for accurate design integration into advanced circuitry.

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TOSHIBA MICROWAVE POWER Ga As FET TIM7785-8L

Low Distortion Internally Matched Power Ga As FETs (C-Band)

Features Low intermodulation distortion IM = -44 d Bc at Po = 28 d Bm, Single carrier level High power

= 39 d Bm at 7.7 GHz to 8.5 GHz 1d B High gain = 5.0 d B at 7.7 GHz to 8.5 GHz 1d B Broad band internally matched Hermetically sealed package

RF Performance Specifications (Ta = 25 C)

Characteristics Symbol Condition Unit Min. Typ. Max

Output Power at 1d B

d Bm 38.0 39.0

Compression Point

Power Gain at 1d B

Compression Point = 10V

DS f = 7.7 ~ 8.5 GHz

Drain Current 2.3 2.8

Gain Flatness d B 0.6

Power Added Efficiency

3rd Order Intermodulation Distortion IM d Bc -41 -44

Note 1

Drain Current 2.3 2.8

Channel-Temperature Rise x I x R (c-c)

ch DS DS th

Electrical Characteristics (Ta = 25 C)

Characteristic Symbol Condition Unit Min. Typ. Max

= 3V DS

Trans-conductance gm m S

= 3.0A DS

= 3V DS

Pinch-off Voltage -2 -3.5 -5.0

GSoff

= 40m A DS

= 3V DS

Saturated Drain Current 5.8 7.5

= 0V GS

Gate-Source Breakdown Voltage = -120 -5

GSO GS

Channel

Thermal Resistance C/W 2.3 3.5

th (c-c)

to case

Note 1: 2 tone Test Pout = 28d Bm Single Carrier Level.

The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip- ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.

TOSHIBA CORPORATION MW51080196 1/5

Page Summary Contents For Toshiba TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (C-Band) Data Handbook

Page 1 TOSHIBA MICROWAVE POWER Ga As FET TIM7785-8L Low Distortion Internally Matched Power Ga As FETs (C-Band) Features Low intermodulation distortion IM = -44 d Bc at Po = 28 d Bm, Single carrier level Hig...
Page 2 TIM7785-8L Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Unit Rating Drain-Source Voltage Gate-Source Voltage -5 Drain Current Total Power Dissipation (T = 25 C) 37.5 Channel Temperature ...
Page 3 TIM7785-8L RF Performances TOSHIBA CORPORATION MW51080196 3/5
Page 4 TIM7785-8L Power Dissipation vs. Case Temperature IM vs. Output Power Characteristics 4/5 MW51080196 TOSHIBA CORPORATION
Page 5 TIM7785-8L TIM7785-8L S-Parameters (MAGN. and ANGLES) TOSHIBA CORPORATION MW51080196 5/5

Manual Details

Brand Toshiba
Pages 5
File Size 138.98 KB
Published June 02, 2026
27 views

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Frequently Asked Questions

Can I use this FET in safety or high-reliability equipment?

No, caution is advised; consultants are recommended for life-critical applications like traffic signals or atomic energy control.

What are the absolute maximum ratings (DSV and DIV)?

The Drain-Source Voltage (Vds) max rating is 15V, and the Drain Current (Id) max rating is 8A.

How should I handle soldering this component?

Ensure the soldering iron is grounded and do not exceed 10 seconds of operation at 260°C.