Texas Instruments TPS1100, TPS1100Y Data Sheet

查询TPS1100PWR供应商 TPS1100, TPS1100Y

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995

Low r DS(on) 0.18 Ω Typ at VGS = –10 V D OR PW PACKAGE (TOP VIEW)

3 V Compatible Requires No External VCC SOURCE DRAIN

TTL and CMOS Compatible Inputs SOURCE DRAIN SOURCE DRAIN

VGS(th) = –1.5 V Max

GATE DRAIN

Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 k V Per

D PACKAGE PW PACKAGE

MIL-STD-883C, Method 3015

description The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments Lin Bi CMOS process. With a schematic maximum VGS(th) of –1.5 V and an IDSS of only

SOURCE

0.5 µA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low r DS(on) and excellent ac

characteristics (rise time 10 ns typical) make the

Protection

TPS1100 the logical choice for low-voltage Circuitry switching applications such as power switches for

pulse-width-modulated (PWM) controllers or motor/bridge drivers. The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is DRAIN at a premium and height restrictions do not allow

NOTE A: For all applications, all source pins should be connected

for a small-outline integrated circuit (SOIC) and all drain pins should be connected. package.

AVAILABLE OPTIONS PACKAGED DEVICES

CHIP FORM

TA SMALL OUTLINE PLASTIC DIP

–40°C to 85°C TPS1100D TPS1100PWLE TPS1100Y The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS1100DR). The PW package is available only left-end taped and reeled (indicated by the LE suffix on the device type; e.g., TPS1100PWLE). The chip form is tested at 25°C.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 k V according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.

Lin Bi CMOS is a trademark of Texas Instruments Incorporated.

Copyright  1995, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

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