Texas Instruments TPIC5303 3-Channel Independent Gate-Protected Power DMOS Array Owner's Manual
Summary
This technical manual details the TPIC5303, a 3-channel gate-protected power DMOS array designed for high-voltage applications. Ideal for circuit designers and engineers, it describes the integrated zener diodes that offer 4000 V ESD protection and the device's robust specifications for switching and pulse current handling.
Page 1 Text Content
TPIC5303
3-CHANNEL INDEPENDENT GATE-PROTECTED
POWER DMOS ARRAY
SLIS039A – SEPTEMBER 1994 – REVISED SEPTEMBER 1995
Low r DS(on) 0.4 Ω Typ D PACKAGE
(TOP VIEW)
High Voltage Output 60 V Extended ESD Capability 4000 V
DRAIN2 GATE1
Pulsed Current 5 A Per Channel
DRAIN2 SOURCE1
Fast Commutation Speed
SOURCE2 SOURCE1 SOURCE2 DRAIN1
description
GATE2 DRAIN1 DRAIN3 SOURCE3
The TPIC5303 is a monolithic gate-protected
DRAIN3 SOURCE3
power DMOS array that consists of three
GND GATE3
independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-p F capacitor in series with a 1.5-kΩ resistor. The TPIC5303 is offered in a standard 16-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature range of –40°C to 125°C.
schematic
DRAIN1 DRAIN2 GATE3 DRAIN3GATE2
GATE1
ZC1b ZC2b
ZC1a ZC2a ZC3a
14, 15 3, 4 10, 11 SOURCE1 GND SOURCE2 SOURCE3
NOTE A: For correct operation, no terminal pin may be taken below GND.
PRODUCTION DATA information is current as of publication date. Copyright 1995, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Page Summary Contents For Texas Instruments TPIC5303 3-Channel Independent Gate-Protected Power DMOS Array Owner's Manual
Manual Details
| Brand | Texas Instruments |
|---|---|
| Pages | 11 |
| File Size | 197.40 KB |
| Published | June 15, 2026 |
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Frequently Asked Questions
What is the maximum output voltage for each channel?
Each channel can handle up to 60 V drain-to-source.
What is the purpose of the integrated zener diodes?
They prevent gate damage from overstress and provide up to 4000 V ESD protection.
What is the maximum pulsed current per channel?
It can handle a pulsed drain current of 5 A per channel.
What is the operating temperature range?
It is characterized for operation from -40°C to 125°C case temperature.
What is the typical on-state resistance?
The typical drain-to-source on-state resistance is 0.4 Ω.