Sanyo Ultrahigh-Speed Switching Applications 2SK2969 Handbook
Summary
Engineered for ultrahigh-speed power applications, this N-Channel Silicon MOSFET features low ON resistance and efficient 2.5V driving capability. This comprehensive datasheet provides electrical enthusiasts, electronics designers, and engineers with precise operational specifications, including absolute maximum ratings, gate charges, and detailed switching characteristics necessary for building robust high-frequency switching circuits.
Page 1 Text Content
Ordering number:ENN6314
N-Channel Silicon MOSFET
2SK2969
Ultrahigh-Speed Switching Applications
Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching.
· 2.5V drive.
[2SK2969]
0 to 0.1
1 : Gate 2 : Source 3 : Drain SANYO : CP
Specifications Absolute Maximum Ratings at Ta = 25˚C
retemara P lobmy S snoitidno C sgnita R tin U
egatlo Vecruo S-ot-niar D
egatlo Vecruo S-ot-eta G 01±
)CD(tnerru Cniar D ID 8.0
)eslu P(tnerru Cniar D PW≤10µs, duty cycle≤1% 2.3 PD
noitapissi Drewo Pelbawoll A PD 52.0 erutarepme Tlennah C hc T ˚C erutarepme Tegarot S gts T 051+ot55– ˚C
Electrical Characteristics at Ta = 25˚C
sgnita R
retemara P lobmy S snoitidno C tin U
nim pyt xam
egatlo Vnwodkaer Becruo S-ot-niar D ID V,Am1= 0=
SSD)RB( SG
tnerru Cniar Degatlo Veta G-ore Z V,V03= 0= Aµ
SSD SD SG
tnerru Cegakae Lecruo S-ot-eta G V,V8±= 0= 01± Aµ
SSG SG SD
egatlo Vffotu C I,V01= Am1= 4.0 3.1
)ffo(SG SD
ecnattimd Arefsnar Tdrawro F |sfy| I,V01= Am004= 1.1 6.1
SD ID V,Am004= V4= mΩ )no(SD SG
ecnatsise Retat S-n Oecruo S-ot-niar Dcitat S
ID V,Am001= V5.2= mΩ )no(SD SG
Marking : GK Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2652 No.6314–1/4
Page Summary Contents For Sanyo Ultrahigh-Speed Switching Applications 2SK2969 Handbook
Manual Details
| Brand | Sanyo |
|---|---|
| Pages | 4 |
| File Size | 175.03 KB |
| Published | May 28, 2026 |
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Frequently Asked Questions
Are these transistors suitable for life-support or aircraft control systems?
No, they do not have specifications for applications requiring extremely high levels of reliability, such as life-support systems or aircraft’s control systems.
What is the maximum continuous drain current (Id)?
The maximum allowable pulsed drain current (Id) is 3A and can be used for a short duration of 2µs.
What are the thermal limits for this MOSFET?
The maximum channel temperature (Tc) is 150°C, while the storage temperature range (Tst) is –55 to +150°C.
Can I use these MOSFETs in high-reliability systems?
SANYO assumes no responsibility for equipment failures if products are used at values exceeding rated values; consult a representative before use in critical applications.