SANYO SCH1311 Handbook
Summary
A high-performance P-Channel Silicon MOSFET switching device designed for general-purpose power electronics applications. This manual provides comprehensive technical data, detailed electrical characteristics (e.g., low ON-resistance, ultrahigh-speed switching capabilities), and absolute maximum ratings. It is an essential resource for hardware engineers and designers needing reliable components for 4V drive power switching systems, allowing precise circuit integration and robust system design.
Page 1 Text Content
查询SCH1311供应商 Ordering number : ENN8102 SCH1311
P-Channel Silicon MOSFET
SCH1311 General-Purpose Switching Device Applications
Features Low ON-resistance. Ultrahigh-speed switching. 4V drive.
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 Drain Current (DC) ID --1.5 Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --6.0 Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 0.8 Channel Temperature Tch °C Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1m A, VGS=0 --30 Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1m A --1.2 --2.6 Forward Transfer Admittance yfs VDS=--10V, ID=--0.8A 0.9 1.5
RDS(on)1 ID=--0.8A, VGS=--10V mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--0.4A, VGS=--4V mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz p F Output Capacitance Coss VDS=--10V, f=1MHz p F Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz p F Turn-ON Delay Time td(on) See specified Test Circuit. ns Rise Time tr See specified Test Circuit. ns Turn-OFF Delay Time td(off) See specified Test Circuit. ns Fall Time tf See specified Test Circuit. ns Marking : JL Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1504PE TS IM TB-00000517 No.8102-1/4
Page Summary Contents For SANYO SCH1311 Handbook
Manual Details
| Brand | Sanyo |
|---|---|
| Pages | 4 |
| File Size | 36.58 KB |
| Published | May 29, 2026 |
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Frequently Asked Questions
What operating environments are forbidden for this MOSFET?
It is unsuitable for applications requiring extremely high levels of reliability, such as life-support or aircraft control systems.
What is the typical static drain-to-source on-state resistance (R(on))?
At Ta=25°C and I = --0.4A, the R(on) ranges from 400 to 600 mΩ.
What is the absolute maximum drain current (DC) rating?
The rating for Drain Current (DC) is --1.5 A.
How is power dissipation calculated or limited?
Allowable Power Dissipation (Pd) is 0.8 W when mounted on a ceramic board.