SANYO CPH6313 Handbook
Summary
This datasheet provides comprehensive specifications for the CPH6313 P-Channel Silicon MOSFET—an ideal component designed for demanding high-speed switching applications due to its low ON-resistance and rapid performance characteristics. The manual details electrical parameters, including absolute maximum ratings, capacitance values, thermal behavior, and detailed timing diagrams. It is essential documentation for electronics designers, power engineers, and hardware developers who require reliable semiconductor components for robust circuit design and implementation.
Page 1 Text Content
查询CPH6313供应商 Ordering number : ENN7017
CPH6313
P-Channel Silicon MOSFET
CPH6313
High-Speed Switching Applications
Features Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 2.5V drive.
[CPH6315]
0.95 1 : Drain
2 : Drain 3 : Gate 4 : Source 5 : Drain
6 : Drain
Specifications
SANYO : CPH6
Absolute Maximum Ratings a t Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --20 0.
Gate-to-Source Voltage VGSS ±10 Drain Current (DC) ID --4 Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --16 Allowable Power Dissipation PD Mounted on a ceramic board (1200mm2✕0.8mm) 1.6 Channel Temperature Tch °C Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics a t Ta=25°C
Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1m A, VGS=0 --20 Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0 --1 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1m A --0.4 --1.4 Forward Transfer Admittance yfs VDS=--10V, ID=--2A 5.8
RDS(on)1 ID=--2A, VGS=--4.5V mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--1A, VGS=--2.5V mΩ
Marking : JP Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73001 TS TA-3308 No.7017-1/4
Page Summary Contents For SANYO CPH6313 Handbook
Manual Details
| Brand | Sanyo |
|---|---|
| Pages | 4 |
| File Size | 31.03 KB |
| Published | May 28, 2026 |
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Frequently Asked Questions
Can I use this MOSFET in life-support or aircraft control systems?
No. This product is not suitable for applications requiring extremely high levels of reliability, such as life-support or aircraft's control systems.
What are the maximum operating voltage limits (Vds and Vgs)?
The Drain-to-Source Voltage (Vds) must be kept below --20 V, and the Gate-to-Source Voltage (Vgs) limit is ±10 V.
What is the static R(on) resistance at room temperature?
At Ta=25°C with I =--1A, V =--2.5V, the typical Static Drain-to-Source On-State Resistance (R(on)) ranges from 80 to 110 mΩ.
What is the specified Turn-ON delay time?
The typical Turn-ON Delay Time t(on) is listed as 57 ns under standard test conditions.