SANYO 2SK3120 Ultrahigh-Speed Switching Applications Data Handbook
Summary
Optimize your power electronics design with this detailed datasheet for the 2SK3120 N-Channel Silicon MOSFET. This manual provides comprehensive technical specifications necessary for developing ultrahigh-speed switching applications. Users gain access to absolute maximum ratings, detailed electrical characteristics—including $R_{DS(on)}$, capacitance values, and precise turn-on/turn-off timing profiles. It is essential reading for electrical engineers and circuit designers who require accurate performance data to ensure optimal integration and reliable operation of the MOSFET within high-power systems.
Page 1 Text Content
查询2SK3120供应商 Ordering number:ENN6103A
N-Channel Silicon MOSFET
2SK3120
Ultrahigh-Speed Switching Applications
Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching.
· 4V drive.
[2SK3120] 4.5
3.0 1 : Gate 2 : Drain
3 : Source SANYO : PCP Specifications (Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
retemara P lobmy S snoitidno C sgnita R tin U egatlo Vecruo S-ot-niar D
egatlo Vecruo S-ot-eta G 02±
SSG 1. 2.
)CD(tnerru Cniar D ID
4. ax
)eslu P(tnerru Cniar D PW≤10µs, duty cycle≤1%
Tc=25˚C 5.3
noitapissi Drewo Pelbawoll A PD
Mounted on a ceramic board (250mm2×0.8mm) 3.1
erutarepme Tlennah C hc T ˚C erutarepme Tegarot S gts T 051+ot55– ˚C
Electrical Characteristics at Ta = 25˚C
sgnita R
retemara P lobmy S snoitidno C tin U
nim pyt xam
egatlo Vnwodkaer Becruo S-ot-niar D ID V,Am1= 0=
SSD)RB( SG
tnerru Cniar Degatlo Veta Gore Z V,V03= 0= Aµ
SSD SD SG
tnerru Cegakae Lecruo S-ot-eta G V,V61±= 0= 01± Aµ
SSG SG SD
egatlo Vffotu C I,V01= Am1= 0.1 4.2
)ffo(SG SD
ecnattimd Arefsnar Tdrawro F |sfy| I,V01= A1= 2.1 8.1
SD ID V,A1= V01= mΩ )no(SD SG
ecnatsise Retat S-n Oecruo S-ot-niar Dcitat S
ID V,Am005= V4= mΩ )no(SD SG
Marking : KT Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30100TS (KOTO) TA-2495 No.6103–1/4
Page Summary Contents For SANYO 2SK3120 Ultrahigh-Speed Switching Applications Data Handbook
Manual Details
| Brand | Sanyo |
|---|---|
| Pages | 4 |
| File Size | 129.72 KB |
| Published | June 04, 2026 |
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Frequently Asked Questions
What specific types of applications is this MOSFET designed for?
It is characterized for Ultrahigh-Speed Switching Applications due to its low ON resistance.
Are there any limitations regarding product reliability or intended use?
No. It is not rated for extremely reliable systems such as life-support or aircraft's control systems, and SANYO assumes no responsibility if ratings are exceeded.
What are the maximum continuous drain current and allowable power dissipation at a case temperature of 25°C?
The DC Drain Current (D) is rated up to 2A, and the allowable power dissipation ($P_d$) is dependent on specific mounting conditions but listed as an absolute maximum rating.