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SANYO 2SK2616 Handbook(1)

Summary

Explore detailed technical specifications for this high-performance N-Channel Silicon MOSFET (2SK2616), engineered for ultrahigh-speed switching applications. This manual is an essential resource covering absolute maximum ratings, electrical characteristics, switching times, and operational graphs. Designed specifically for electrical engineers and hardware designers building demanding power electronics circuits who require reliable solid-state switches.

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现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎好! Ordering number:ENN5620B

N-Channel Silicon MOSFET

2SK2616

Ultrahigh-Speed Switching Applications

Features Package Dimensions · Low ON-resistance. unit:mm · Low Qg.

[2SK2616] 6.5

0.6 0.5 1 : Gate

2 : Drain 3 : Source 4 : Drain

SANYO : TP

unit:mm

[2SK2616]

1.2 1 : Gate

0 to 0.2 2 : Drain

3 : Source 4 : Drain

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O1899TS (KOTO) TA-0835 No.5620–1/4

Page Summary Contents For SANYO 2SK2616 Handbook(1)

Page 1 现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎好! Ordering number:ENN5620B N-Channel Silicon MOSFET 2SK2616 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. unit:mm · Low Qg. [2SK2616...
Page 2 2SK2616 Specifications Absolute Maximum Ratings at Ta = 25˚C retemara P lobmy S snoitidno C sgnita R tin U egatlo Vecruo S-ot-niar D egatlo Vecruo S-ot-eta G 03± )CD(tnerru Cniar D ID )eslu P(tnerru C...
Page 3 2SK2616 VDS ID VGS St at ic ra in -t o- So ur ce VDS=10V ut of ol ta ge , V -S ta te es is ta nc e, (o n) S( of f) Fo rw ar ra ns fe dm itt an ce ra in ur re nt ,I Tc=-25°C VGS=6.0V Drain-to-Source Vo...
Page 4 2SK2616 SW Time ID A S O IDP llo ab le ow <1µs er is si pa tio n, Sw itc hi ng im e, im ns DC operat 10ms Operation in this area td(off) is limited by RDS(on). tr 0.1 td(on) Tc=25°C Single pulse Dr...

Manual Details

Brand Sanyo
Pages 4
File Size 123.88 KB
Published May 29, 2026
29 views

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Frequently Asked Questions

Can this MOSFET be used in life-support or aerospace control systems?

No. SANYO warns that these products do not have specifications for applications requiring extremely high levels of reliability, such as life-support systems or aircraft’s control systems.

What is the maximum continuous drain current and allowable power dissipation at room temperature?

The continuous Drain Current (Id) is 2A, and the Allowable Power Dissipation (Pd) at a case temperature (Tc) of 25°C is 1W.

If I use this component in my own product design, what safety guidelines must I follow?

Designers must adopt protective circuits and error prevention circuits for safe design to prevent accidents or events that could endanger human lives.