ROHM Transistor Datasheets 2SB1197K User Guide Manual
Summary
This low-frequency NPN transistor is a high-reliability component designed for fundamental electronic switching applications. The comprehensive manual provides detailed electrical specifications, including saturation voltage, current gain (hFE), and key performance curves like I-V characteristics. It is essential reference material for electronics designers building stable circuit boards for general equipment such as audio/visual gear or office automation systems needing reliable semiconductor components.
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2SB1197K
Transistors
Low Frequency Transistor ( 32V, 0.8A) 2SB1197K
Features External dimensions (Unit : mm)
1) Low VCE(sat).
VCE(sat) 0.5V
IC / IB= 0.5A / 50m A 1.9±0.2 −0.1
2) IC = 0.8A.
3) Complements the 2SD1781K.
(3) All terminals have the same dimensions +0.1
Structure
Epitaxial planar type (1) Emitter ROHM : SMT3 (2) Base
PNP silicon transistor EIAJ : SC-59 (3) Collector
Abbreviated symbol: AH∗
∗ Denotes h FE
Absolute maximum ratings (Ta=25 C) −0 .1
Parameter Symbol Limits Unit
Collector-base voltage VCBO −40
Collector-emitter voltage VCEO −32
Emitter-base voltage VEBO −5
Collector current IC −0.8
Collector power dissipation PC 0.2
Junction temperature Tj °C
Storage temperature Tstg −55 to 150 °C
Electrical characteristics (Ta=25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −40 IC= −50μA
Collector-emitter breakdown voltage BVCEO −32 IC= −1m A
Emitter-base breakdown voltage BVEBO −5 IE= −50μA
Collector cutoff current ICBO −0.5 μA VCB= −20V
Emitter cutoff current IEBO −0.5 μA VEB= −4V
Collector-emitter saturation voltage VCE(sat) −0.5 IC/IB= −0.5A/ −50m A
DC current transfer ratio h FE VCE= −3V, IC= −100m A
Transition frequency f T −− MHz VCE= −5V, IE=50m A, f=100MHz
Output capacitance Cob p F VCB= −10V, IE=0A, f=1MHz
Rev.A 1/2
Page Summary Contents For ROHM Transistor Datasheets 2SB1197K User Guide Manual
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 52.35 KB |
| Published | June 15, 2026 |
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Frequently Asked Questions
What is the collector-emitter saturation voltage (VCE(sat))?
It is specified as -0.5 V.
Are there specific specifications for the transistor's size or dimensions?
The manual lists external dimensions and ensures all terminals have consistent dimensions.
What are the absolute maximum ratings for the 2SB1197K transistor?
VCEO is rated at -32 V, IC at -0.8 A, and PC (power dissipation) at 0.2 W.
Who does this transistor complement?
The 2SB1197K complements the 2SD1781K.
What is the maximum junction temperature (Tj)?
The junction temperature capacity is 150 °C, with a storage temperature range of -55 to 150 °C.