ROHM EMX3/UMX3N/IMX3 Specifications Data Sheet User Guide

General purpose (dual transistors) EMX3 / UMX3N / IMX3 Features Dimensions (Unit : mm)

Two 2SC2412AK chips in a EMT or UMT or SMT package. EMX3

Inner circuits

(6) (1) 1.2 EMX3 / UMX3N IMX3 1.6

Tr2 Tr2 Tr1 Tr1

Each lead has same dimensions ROHM : EMT6

UMX3N

Package, marking, and packaging specifications

Type EMX3 UMX3N IMX3 1.25 Package EMT6 UMT6 SMT6 2.1 Marking X3 X3 X3 Code T2R TR T108

Basic ordering unit (pieces) 0.1Min.

0. 0. 0. Each lead has same dimensions ROHM : UMT6

EIAJ : SC-88

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit 0.

Collector-base voltage VCBO 0. 0. 0. 1.

Collector-emitter voltage VCEO 2. 90. 0. 1.

Emitter-base voltage VEBO IMX3

Collector current IC m A 150(TOTAL)EEMX3 / UMX3N ∗1

Collector power

PC m W

dissipation IMX3 300(TOTAL)

Junction temperature Tj °C 1.6

Storage temperature Tstg −55 to +150 °C

∗1 120m W per element must not be exceeded. ∗2 200m W per element must not be exceeded.

0.3Min.

Each lead has same dimensions ROHM : SMT6

EIAJ : SC-74

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO IC=50μA

Collector-emitter breakdown voltage BVCEO IC=1m A Emitter-base breakdown voltage BVEBO IE=50μA Collector cutoff current ICBO 0.1 μA VCB=60V Emitter cutoff current IEBO 0.1 μA VEB=7V Collector-emitter saturation voltage VCE(sat) 0.4 IC/IB=50m A/5m A DC current transfer ratio h FE VCE=6V, IC=1m A Transition frequency f T MHz VCE=12V, IE=−2m A, f=100MHz Output capacitance Cob 3.5 p F VCB=12V, IE=0m A, f=1MHz

∗Transition frequency of the device.

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1/3 2011.12 - Rev.B

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