PHILIPS BSH301 User Manual and Data Sheet
Summary
Dual N-channel MOSFET datasheet for the BSH301, featuring low 40mΩ on-state resistance and ESD protection. Ideal for power management and Li-Ion safety switches in TSSOP8 packaging.
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DISCRETE SEMICONDUCTORS
DATA SHEET
BSH301 Dual N-channel enhancement mode MOS transistor
Objective specification Apr
Page Summary Contents For PHILIPS BSH301 User Manual and Data Sheet
Page 1
查询BSH301供应商 DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective specification Apr
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Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 FEATURES mΩ on-state resistance at 2.5 V gate drive handbook, halfpage d1 s2 s2 g2 RDSon rating dow...
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Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER C...
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Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal speci...
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Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 34 Waterloo Road, NORTH RYDE, NSW...
Manual Details
| Brand | Philips |
|---|---|
| Pages | 5 |
| File Size | 37.95 KB |
| Published | June 22, 2026 |
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Frequently Asked Questions
What is the on-state resistance (R_DSon) at 2.5V gate drive?
The on-state resistance is 40 mΩ (0.04 Ω) at V_GS = 2.5 V and I_D = 3.5 A.
What is the absolute maximum drain-source voltage (V_DS)?
The absolute maximum drain-source voltage per FET is 20 V DC.
What is the maximum continuous drain current (I_D)?
The maximum continuous drain current per FET is 5 A DC at T_S = 80°C.
Is this device suitable for life support applications?
No, the data sheet states it is not designed for life support appliances, devices, or systems.
What precautions are needed during handling?
The gate inputs have ESD protection but must be protected against static discharge during transport or handling as the device is supplied in an antistatic package.