# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

PHILIPS BSH105 User Guide and Data Sheet

Summary

The BSH105 is an N-channel enhancement mode MOS transistor housed in a subminiature SOT23 package, ideal for high-speed, low-power digital interfacing and battery-operated applications. This comprehensive manual provides detailed specifications including absolute maximum ratings, thermal performance data, electrical characteristics (VGS(th), RDS(on)), and operational limits. It is essential reference material for circuit designers and electronics engineers building reliable, efficient circuits requiring fast switching capabilities and minimum threshold voltage.

📄 Preview PAGE OF 7

Page 1 Text Content

查询BSH105供应商

Philips Semiconductors Product specification

N-channel enhancement mode BSH105 MOS transistor

FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = 20 V • Fast switching • Logic level compatible ID = 1.05 A • Subminiature surface mount package RDS(ON) ≤ 250 mΩ (VGS = 2.5 V)

VGS(TO) ≥ 0.4 V

GENERAL DESCRIPTION PINNING SOT23 N-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has very low gate

threshold voltage and extremely Top view

fast switching making it ideal for source battery powered applications and high speed digital interfacing. drain

The BSH105 is supplied in the SOT23 subminiature surface mounting package.

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ VGS Gate-source voltage ± 8 ID Drain current (DC) Ta = 25 ˚C 1.05

Ta = 100 ˚C 0.67

IDM Drain current (pulse peak value) Ta = 25 ˚C 4.2 Ptot Total power dissipation Ta = 25 ˚C 0.417

Ta = 100 ˚C 0.17

Tstg, Tj Storage & operating temperature - 55 ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-a Thermal resistance junction to FR4 board, minimum K/W

ambient footprint

August 1998 Rev 1.000

Page Summary Contents For PHILIPS BSH105 User Guide and Data Sheet

Page 1 查询BSH105供应商 Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = 20 V • Fast switching ...
Page 2 Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. ...
Page 3 Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor Normalised Power Dissipation, PD (%) Peak Pulsed Drain Current, IDM (A) BSH105 D = 0.5 0.2 0.1 0.05 0.02 D...
Page 4 Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor Drain Current, ID (A) BSH105 Threshold Voltage, VGS(to), (V) VDS > ID X RDS(on) 0.8 typical minimum Tj ...
Page 5 Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor Gate-source voltage, VGS (V) BSH105 Source-Drain Diode Current, IF (A) BSH105 VDD = 20 V RD = 20 Ohms Tj =...
Page 6 Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor MECHANICAL DATA Plastic surface mounted package; 3 leads SOT23 e1 bp Lp detail X scale DIMENSIONS (mm are ...
Page 7 Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specificatio...