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PHILIPS BSH101 User Guide and Data Sheet

Summary

This datasheet provides comprehensive technical specifications for the BSH101 N-channel enhancement mode MOS transistor in an SOT23 package. Designed for demanding electronic applications, this component features high-speed switching capabilities and very low threshold voltage, making it ideal for power management circuits, DC/DC converters, and battery-powered systems. It offers a direct interface with standard logic blocks (C-MOS, TTL), suitable for professional electrical engineers and designers building reliable, efficient, low-power circuit solutions.

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查询BSH101供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

andbook, halfpage

BSH101 N-channel enhancement mode MOS transistor

Product speciÞcation Jul

Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b

Page Summary Contents For PHILIPS BSH101 User Guide and Data Sheet

Page 1 查询BSH101供应商 DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage BSH101 N-channel enhancement mode MOS transistor Product speciÞcation Jul Supersedes data of 1997 Nov 28 File under Discrete Semiconduc...
Page 2 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor FEATURES PINNING - SOT23 Very low threshold PIN SYMBOL DESCRIPTION High-speed switching No secondary break...
Page 3 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIO...
Page 4 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering ...
Page 5 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor CHARACTERISTICS Tj °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS ...
Page 6 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor handbook, full pagewidth VDD 90 % td(on) td(off) tf tr MAM274 ton toff Fig.5 Switching times test circuit ...
Page 7 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor MGM195 MGM193 handbook, halfpage handbook, halfpage Coss Crss VGS (V) VDS (V) VGS 0; f MHz; Tamb °C. VDS V...
Page 8 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor MGM199 MGM200 1.2 2.0 handbook, halfpage handbook, halfpage Tj (°C) Tj (°C) RDSon at Tj VGSth at Tj RDSon ...
Page 9 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 e1 bp Lp detail X scale DIMENSIONS (mm are ...
Page 10 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specificatio...
Page 11 Philips Semiconductors Product specification N-channel enhancement mode BSH101 MOS transistor NOTES
Page 12 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 34 Waterloo Road, NORTH RYDE, NSW...