PHILIPS BSH299 User Guide and Data Sheet

Summary

The BSH299 is a high-performance P-channel enhancement mode MOS transistor designed in an SOT363 package. This detailed datasheet provides comprehensive technical specifications, including electrical characteristics, thermal models, and switching parameters. It is suited for engineers designing compact power management solutions, general-purpose switches, and battery-powered electronics such as cellular phones that require reliable, high-speed performance with low threshold voltage operation.

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查询BSH299供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BSH299 P-channel enhancement mode MOS transistor

Objective specification Feb

File under Discrete Semiconductors, SC13b

Page Summary Contents For PHILIPS BSH299 User Guide and Data Sheet

Page 1 查询BSH299供应商 DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification Feb File under Discrete Semiconductors, SC13b

Page 2 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 FEATURES PINNING - SOT363 Low threshold voltage PIN SYMBOL DESCRIPTION High-speed switching drain No sec...

Page 3 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDIT...

Page 4 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 CHARACTERISTICS Tj °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)D...

Page 5 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 MGL382 MGL383 handbook, halfpage handbook, halfpage Ptot pulsed (W) ID (A) Ts (o C) VDS (V) Fig.2 Power ...

Page 6 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 handbook, halfpage 10 % handbook, halfpage INPUT VDD = −40 V OUTPUT ton toff MLD189 MBB690 Fig.5 Switchi...

Page 7 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 MLD196 MLD198 handbook, halfpage handbook, halfpage ID RDSon VGS = −2.5 V −3 V −5 V−4 V (m A) (Ω) ID (m ...

Page 8 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 pin 1 index e1 BMbp Lp detail X scale DI...

Page 9 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specificat...

Page 10 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 NOTES

Page 11 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 NOTES

Page 12 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 34 Waterloo Road, NORTH RYDE, NSW...

Manual Details

Brand	Philips
Pages	12
File Size	96.56 KB
Published	June 20, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage (V_DS) for BSH299?

-50 V

How should the BSH299 be handled to prevent static discharge?

Protect gate-source input during transport/handling; supplied in antistatic package

What is the typical turn-on switching time for BSH299?

3 ns at V_GS = 0 to -10 V, V_DD = -40 V, I_D = -0.2 A

What are the primary applications of BSH299?

Power management, battery-powered devices (e.g., cellular phones), general purpose switch