PHILIPS BSH112 User Guide and Data Sheet
Summary
BSH112 is an N-channel enhancement mode MOSFET using TrenchMOS technology in a compact SOT23 package. Ideal for relay drivers, high-speed line drivers, and logic level translators, this surface mount device features fast switching, logic-level compatibility, and gate-source ESD protection diodes.
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BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™1 technology.
Product availability: BSH112 in SOT23.
2. Features
Trench MOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes.
3. Applications
Relay driver High speed line driver Logic level translator.
4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol
gate (g) source (s) drain (d)
03ab44
03ab60
SOT23 N-channel MOSFET
1. Trench MOS is a trademark of Royal Philips Electronics.
Page Summary Contents For PHILIPS BSH112 User Guide and Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 13 |
| File Size | 112.68 KB |
| Published | June 20, 2026 |
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Frequently Asked Questions
What is the maximum drain-source voltage and continuous drain current for BSH112?
Maximum VDS is 60 V (DC) and continuous ID is 300 mA at 25 °C with VGS = 10 V.
What is the typical on-state resistance of BSH112?
At VGS = 10 V and ID = 500 mA, typical RDSon is 2.8 Ω (max 5 Ω); at VGS = 4.5 V and ID = 75 mA, typical is 3.8 Ω (max 5.3 Ω).
In which package is BSH112 available?
BSH112 is available in a SOT23 surface mount package with gate, source, and drain pins.
What are typical applications of BSH112?
Typical applications include relay driver, high speed line driver, and logic level translator.
What is the operating junction temperature range for BSH112?
The operating junction temperature range is -65 °C to +150 °C.