PHILIPS BSH111 Data Sheet User Manual
Summary
Philips BSH111 is an N-channel enhancement mode field-effect transistor using TrenchMOS technology in a subminiature SOT23 surface mount package. Rated for 55V drain-source voltage, 335mA drain current, and 0.83W power dissipation, it offers low RDS(on) of 2.3 ohms typical at 4.5V gate drive with very fast switching and low threshold voltage. The device features a gate-source protection diode and is designed for battery management, high-speed switching, and logic level translation applications. Its small footprint and efficient switching characteristics make it suitable for portable electronics and compact power management circuits.
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查询BSH111供应商
BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology.
Product availability: BSH111 in SOT23.
2. Features
Trench MOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package.
3. Applications
Battery management High speed switch Logic level translator.
4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol
gate (g) source (s) drain (d)
MBB076
MSB003Top view
SOT23
Page Summary Contents For PHILIPS BSH111 Data Sheet User Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 13 |
| File Size | 95.24 KB |
| Published | July 04, 2026 |
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Frequently Asked Questions
What package does the BSH111 use?
It is available in a SOT23 subminiature surface mount package.
What is the max drain-source voltage?
The absolute maximum DC drain-source voltage is 55 V.
What are typical BSH111 applications?
Battery management, high speed switching, and logic level translation.
What is the pin 2 function?
Pin 2 is the source (s) of the BSH111 transistor.