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Philips BLF546 Data Sheet User Manual

Summary

A high-performance UHF push-pull power MOS transistor designed specifically for demanding communication transmitter applications in the UHF frequency range. This component offers excellent reliability, high power gain, and robust thermal stability, featuring a compact SOT268 package. The accompanying manual provides comprehensive operational data, including electrical characteristics, limiting values, performance curves, and handling instructions necessary for expert engineers and RF designers integrating reliable, high-power semiconductor solutions.

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DISCRETE SEMICONDUCTORS

DATA SHEET

BLF546 UHF push-pull power MOS transistor

Product specification October

Page Summary Contents For Philips BLF546 Data Sheet User Manual

Page 1 查询BLF546供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF546 UHF push-pull power MOS transistor Product specification October
Page 2 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures e...
Page 3 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise...
Page 4 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. U...
Page 5 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 MDA522 MDA523 0.8 handbook, halfpage handbook, halfpage RDSon 0.2 Cis Tj (°C) VDS (V) ID 2.4 A; VGS 10 V. VGS 0; ...
Page 6 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h 0.25 K/W, unless otherwise specified. RF perfo...
Page 7 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 handbook, full pagewidth +VD C12 C13 VBIAS input output BLF546 MDA530 VBIAS 500 MHz. Fig.11 Test circuit for clas...
Page 8 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C20 multilayer ceramic chip capacitor 15 p F, 500 V (note 2)...
Page 9 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 handbook, full pagewidth straps straps MDA518 The circuit and components are situated on one side of the printed ...
Page 10 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 MDA527 MDA528 handbook, halfpage handbook, halfpage Zi ZL −4 XL f (MHz) f (MHz) Class-B operation; VDS = 28 V; ID...
Page 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A H1 Cw2 U2H EP w1 BM 10 mm...
Page 12 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for ...

Manual Details

Brand Philips
Pages 12
File Size 93.71 KB
Published July 12, 2026
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Frequently Asked Questions

How should this product be disposed of after use?

It must be disposed of as chemical or special waste according to local regulations, and never in general or domestic waste.

What is the maximum drain-source voltage ($V_{DS}$) rating for the device?

The absolute maximum specified drain-source voltage ($V_{DS}$) is -65 V.

What protection is required for the gate-source input during handling?

The gate-source input must have a common source connection to protect it against static charge damage while being transported or handled.