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PHILIPS BSH108 Data Sheet User Manual

Summary

Discover the BSH108, a powerful N-channel enhancement mode MOSFET leveraging advanced TrenchMOS™ technology in an ultra-compact SOT23 package. This component offers fast switching and logic-level compatibility for demanding power applications. The accompanying manual provides comprehensive technical documentation, including detailed electrical characteristics, thermal impedance curves, and limiting values. It is essential reading for engineers designing robust circuits such as high-speed switchers, battery management systems, and low-power DC/DC converters.

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查询BSH108供应商

BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088

1. Description

N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™1 technology.

Product availability: BSH108 in SOT23.

2. Features

Trench MOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

3. Applications

Battery management High speed switch Low power DC to DC converter.

4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol

gate (g) source (s) drain (d)

MBB076

MSB003Top view

SOT23

1. Trench MOS is a trademark of Royal Philips Electronics.

Page Summary Contents For PHILIPS BSH108 Data Sheet User Manual

Page 1 查询BSH108供应商 BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plas...
Page 2 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage...
Page 3 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 03aa17 03aa25 Tsp (o C) Tsp (o C) Ptot VGS Pder 100%×= tot C°( Ider 100%×= Fig 1. Normalized total power dissipation as...
Page 4 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-sp) thermal re...
Page 5 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Un...
Page 6 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 03aa81 03aa83 ID 10 V 3.4 V 3 V 4.5 VDS > ID X RDSon VGS = 2.8 V Tj = 25 o C Tj = 25 o C VDS (V) VGS (V) Tj °C Tj °C...
Page 7 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 03aa33 03aa36 2.5 10-1 VGS(th) (V) max maxtypmin o C) Tj ( VGS (V) ID m A; VDS VGS Tj °C; VDS Fig 9. Gate-source thresh...
Page 8 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 03aa85 03ab10 IS VGS VGS = 0V ID = 0.5 A VDD = 15 V Tj = 25 o C Tj = 25 o C VSD (V) QG (n C) Tj °C and 150 °C; VGS ID 0...
Page 9 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 9. Package outline Plastic surface mounted package; 3 leads SOT23 e1 bp Lp detail X scale DIMENSIONS (mm are the origin...
Page 10 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date CPCN Description Product specification; second version; superse...
Page 11 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 11. Data sheet status Datasheet status Product status Definition Objective specification Development This data sheet co...
Page 12 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Netherlands: Tel. +31 2785, Fax. +31 Australi...
Page 13 Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . ....

Manual Details

Brand Philips
Pages 13
File Size 131.62 KB
Published July 04, 2026
4 views

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Frequently Asked Questions

What technology is used in the BSH108 transistor?

It uses TrenchMOS™ technology and comes in a SOT23 plastic package.

What are the operating voltage limits for the drain-source (Vds)?

The maximum continuous Vds is -30 V, with an absolute limit of -30 V at T = 25 to 150 °C.

How is transient thermal performance calculated?

It uses a transient thermal impedance Zth(j-sp) which varies based on pulse duration (t_p) and the temperature delta.

What are some recommended applications for this component?

Applications include battery management, high speed switches, and low power DC to DC converters.