PHILIPS BSH103 Data Sheet User Manual
Summary
This datasheet documents the Philips BSH103 N-channel enhancement-mode MOS transistor in a SOT23 surface-mount package, rated for 30V drain-source voltage and 0.85A continuous drain current at 80°C ambient. The device features a very low gate-source threshold voltage of just 0.4V minimum, making it suitable for direct interface to CMOS and TTL logic without level shifting. On-resistance is 0.5Ω maximum at 2.5V gate drive and 0.5A drain current. Total power dissipation is 0.5W at 80°C solder poin
Page 1 Text Content
查询BSH103供应商
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
BSH103 N-channel enhancement mode MOS transistor
Product specification Feb
Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b
Page Summary Contents For PHILIPS BSH103 Data Sheet User Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 100.00 KB |
| Published | July 07, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What are the primary applications for the BSH103 transistor?
It can be used in DC to DC converters, battery powered apps, power management handbooks, or as a general purpose switch for glue-logic interfaces.
What is the drain current rating at T=80°C under limiting values?
The peak drain current (ID) limit is -3.4 A.
How must this product be handled to prevent damage during transport and storage?
It must be supplied in anti-static packing to prevent electrostatic discharge damage.
What are its key electrical specifications?
It features a low threshold voltage (Vgsth: 0.4 V - V) and operates with a drain current capacity of up to -0.85 A at T=80°C.