PHILIPS BLF1822-10 UHF power LDMOS transistor User Manual
Summary
This technical datasheet provides comprehensive specifications for the BLF1822-10 UHF Power LDMOS Transistor, designed for critical base station and broadcast driver applications. The manual covers detailed RF performance characteristics across a broadband frequency range (HF to 2200 MHz), including typical operating curves, power gain analysis, efficiency ratings, and absolute maximum rating limits. It is essential reading for RF engineers seeking high-reliability components for GSM, EDGE, CDMA, and W-CDMA multicarrier systems requiring robust performance under demanding conditions.
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DATA SHEET
BLF1822-10 UHF power LDMOS transistor Product specification Feb Supersedes data of 2002 Mar 12
Page Summary Contents For PHILIPS BLF1822-10 UHF power LDMOS transistor User Manual
Page 1
查询BLF1822-10供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF1822-10 UHF power LDMOS transistor Product specification Feb Supersedes data of 2002 Mar 12
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C Typical 2-tone performance at supply voltage of PIN DESCRIPTION and IDQ of 85 m A: drain O...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VD...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 APPLICATION INFORMATION 2.2 GHz RF performance in a common source class-AB circuit. Th °C; Rth mb-h 0.4 K/W; unless o...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 MGW644 MGW645 handbook, halfpage handbook, halfpage Gp ηD (d Bc) Gp PL (PEP) (W) PL (PEP) (W) VDS V; IDQ m A; Th °C; ...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 MGW648 MGW649 handbook, halfpage handbook, halfpage ri −4 f (GHz) f (GHz) VDS V; IDQ m A; PL W; Th °C. VDS V; IDQ m A...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 List of components (see Figs and 11) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C10, C11 multilayer...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 handbook, full pagewidth Vgate BLF1822-10 2.2 GHz output BLF1822-10 2.2 GHz input BLF1822-10 2.2 GHz output BLF1822-1...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 APPLICATION INFORMATION 960 MHz RF performance in a common source class-AB circuit. Th °C; Rth mb-h 0.4 K/W; unless o...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 MGW654 MGW655 handbook, halfpage handbook, halfpage (Ω) ri f (MHz) f (MHz) VDS V; IDQ m A; PL W; Th °C. VDS V; IDQ m ...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 List of components (see Figs and 17) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 multilayer ceramic chip ...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 handbook, full pagewidth R2 C15 VDD L12 Vgate BLF1822-10 960 MHz output BLF1822-10 960 MHz input BLF1822-10 960 MHz o...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C w1 BM w2 MC 10 mm scale DIMENSIONS ...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 DATA SHEET STATUS DATA SHEET PRODUCT LEVEL DEFINITION STATUS(1) STATUS(2)(3) Objective data Development This data she...
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Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 NOTES
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 For sales offices addresses send e-mail to: sal...
Manual Details
| Brand | Philips |
|---|---|
| Pages | 16 |
| File Size | 157.57 KB |
| Published | July 22, 2026 |
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Frequently Asked Questions
What is the operating frequency range for this transistor?
It is designed for broadband operation spanning from HF to 2200 MHz.
What is the typical maximum output power (PEP)?
The typical Power Envelope Load (PEP) is 10 W at a supply voltage of 26 V.
What are the physical limits regarding drain-source voltage?
The maximum absolute rating for the drain-source voltage (DSV) is -65 V.
How should the product be handled during storage and transport?
It must be kept in anti-static packing to prevent damage from electrostatic discharge.