PHILIPS BLF1048 UHF Power LDMOS Transistor Data Sheet
Summary
Preliminary specification for the Philips BLF1048 UHF power LDMOS transistor in SOT502A ceramic cap flanged package. N-channel enhancement mode lateral D-MOS with source connected to mounting flange eliminating DC isolators. RF performance at 960 MHz in class-AB 2-tone: 90W PEP output, >14dB power gain, >35% drain efficiency, <=-26dBc IM3. CW 1-tone: 90W output with >14dB gain and >45% efficiency at 26V. 65V drain-source breakdown, 9A DC drain current, 200 degrees C junction temperature max. Supplied in anti-static ESD packaging.
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DATA SHEET book, halfpage
BLF1048 UHF power LDMOS transistor Preliminary specification Feb Supersedes data of 1999 July
Page Summary Contents For PHILIPS BLF1048 UHF Power LDMOS Transistor Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 8 |
| File Size | 47.72 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What frequency range does the BLF1048 operate over?
It is designed for broadband operation from HF to 1 GHz, making it suitable for UHF communication transmitters.
What are the absolute maximum operating voltages for this transistor?
The drain-source voltage (Vds) can reach -65 V to 65 V, and the gate-source voltage (Vgs) is limited to ±20 V.
How should I handle or store this component safely?
It must be kept in anti-static packing throughout transport and handling to prevent damage from electrostatic discharge.
What is the specified thermal resistance for the device?
Under specified RF operating conditions, the thermal resistance Rth(j-h) is 1.15 K/W when measured at T = 25 °C and P = 100 W.