PHILIPS BLF1820-70 UHF Power LDMOS Transistor Data Sheet User Guide
Summary
Engineered for robust RF power amplification, this high-power UHF LDMOS transistor is ideal for critical base station networking. Rated for 70W output power, it provides reliable performance across the GSM/CDMA multi-carrier band (1800–2000 MHz). The comprehensive datasheet covers everything required for advanced design, including detailed electrical characteristics, operational modes, thermal data, and impedance curves for optimal integration into high-reliability RF amplifier circuits.
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DATA SHEET book, halfpage
BLF1820-70 UHF power LDMOS transistor Product specification Feb Supersedes data of 2001 Feb 12
Page Summary Contents For PHILIPS BLF1820-70 UHF Power LDMOS Transistor Data Sheet User Guide
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 104.34 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the operational frequency range for this LDMOS transistor?
It is designed for broadband operation (1800 to 2000 MHz), making it suitable for GSM, EDGE, and CDMA base stations.
What is the typical peak output power (PEP) of the BLF1820-70?
The transistor achieves a typical Peak Envelope Power (PEP) of 65 W under specified operating conditions.
How is this component packaged for transportation and handling?
It is supplied in anti-static packing to prevent damage caused by electrostatic discharge.
What are the absolute maximum voltages I must be aware of when using it?
The absolute maximum ratings include a drain-source voltage (DSV) limit of -65 V and gate-source voltage (GSV) limits of ±15 V.