Panasonic 2SB950, 2SB950A Silicon PNP Epitaxial Planar Type Darlington User Manual

查询2SB950供应商 Power Transistors

2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington

Unit: mm For power amplification and switching 10.0±0.2 4.2±0.2

Complementary to 2SD1276 and 2SD1276A Features

High foward current transfer ratio h FE High-speed switching Full-pack package which can be installed to the heat sink with one screw

Absolute Maximum Ratings (TC=25˚C)

+0.2 Parameter Symbol Ratings Unit 0.5 –0.1

Collector to 2SB950 –60

base voltage 2SB950A –80 2.54±0.25

Collector to 2SB950 –60 5.08±0.5

emitter voltage 2SB950A –80 1:Base

2:Collector

Emitter to base voltage VEBO –5

3:Emitter

Peak collector current ICP –8 TO–220 Full Pack Package(a)

Collector current IC –4

Internal Connection

Collector power TC=25°C

dissipation Ta=25°C

ol de ip 4. 7. 5± 0. 0. 7± 0.

Junction temperature Tj ˚C Storage temperature Tstg –55 to +150 ˚C

Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit

Collector cutoff 2SB950 VCB = –60V, IE = 0 –200

ICBO µA

current 2SB950A VCB = –80V, IE = 0 –200

Collector cutoff 2SB950 VCE = –30V, IB = 0 –500

ICEO µA

current 2SB950A VCE = –40V, IB = 0 –500

Emitter cutoff current IEBO VEB = –5V, IC = 0 –2 m A

Collector to emitter 2SB950 –60

VCEO IC = –30m A, IB = 0

voltage 2SB950A –80

h FE1 VCE = –3V, IC = – 0.5A

Forward current transfer ratio

h FE2 VCE = –3V, IC = –3A Base to emitter voltage VBE VCE = –3V, IC = –3A –2.5 VCE(sat)1 IC = –3A, IB = –12m A –2

Collector to emitter saturation voltage

VCE(sat)2 IC = –5A, IB = –20m A –4

Transition frequency f T VCE = –10V, IC = – 0.5A, f = 1MHz MHz Turn-on time ton 0.3 µs

IC = –3A, IB1 = –12m A, IB2 = 12m A,

Storage time tstg µs

VCC = –50V

Fall time tf 0.5 µs

*h FE2 Rank classification

Rank h FE2 2000 to 5000 4000 to 10000