# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Home > Hitachi > Hitachi 2SC1342 User Guide Manual

Hitachi 2SC1342 User Guide Manual

Summary

The 2SC1342 is a high-performance Silicon NPN Epitaxial Planar transistor designed for critical radio frequency applications, including VHF amplifiers, mixers, and local oscillators. This comprehensive manual provides professional engineers and RF designers with extensive technical resources, covering detailed absolute maximum ratings, electrical characteristics, DC transfer curves, and small signal parameters. It ensures optimal component selection and high-reliability performance in demanding electronic circuit designs.

📄 Preview ‹ PAGE OF 10 ›
‹ Hitachi 2SC1342 User Guide Manual - Page 1 ›

Page 1 Text Content

查询2SC1342供应商

2SC1342 Silicon NPN Epitaxial Planar

Application

• VHF amplifier, mixer • Local oscollator

Outline

TO-92 (2)

1. Emitter 2. Collector 3. Base

Page Summary Contents For Hitachi 2SC1342 User Guide Manual

Page 1 查询2SC1342供应商 2SC1342 Silicon NPN Epitaxial Planar Application • VHF amplifier, mixer • Local oscollator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base
Page 2 2SC1342 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC m A Collector p...
Page 3 2SC1342 ol le ct or ow er is si pa tio ol le ct or Typical Output Characteristics (1) ur re nt Maximum Collector Dissipation Curve PC = 100 m W 20 µA IB = 0 Collector to Emitter Voltage VCE (V) Ambien...
Page 4 2SC1342 ol le ct or ut pu t C ap DC Current Transfer Ratio vs. ac ita nc p F ol le ct or ur re nt ob Typical Transfer Characteristics (2) Collector Current VCE = 6 V VCE = 6 V 0.60 0.64 0.68 0.72 0.76...
Page 5 2SC1342 Reverse Transfer Capacitance oi se ig ur d B Gain Bandwidth Product vs. vs. Emitter Current Collector Current ev er se ra ns fe ap ac ita nc p F VCE = 6 V 0.4 VCE = 10 V f = 1 MHz 0.2 –0.1 –1....
Page 6 2SC1342 or ar ra ns fe uc ep ta nc fe In pu t S uc ep ta nc Small Signal y Parameters (VCE = 6V, IC = 1 m A, Emitter Common Ta = 25°C) ie Item Symbol f = 50 MHz f = 100 MHz f = 200 MHz Unit Input admi...
Page 7 2SC1342 Input Admittance vs. Collector or ar ra Reverse Transfer Admittance vs. ns fe fe to Emitter Voltage Collector to Emitter Voltage In pu t A dm itt an ce bie –0.5 Yre = gre + jbre IC = 1 m A –0....
Page 8 2SC1342 In pu t A dm itt an ce or ar ra ns fe dm Reverse Transfer Admittance vs. itt an ce fe Collector Current Input Admittance vs. Collector Current Yie = gie + jbie bre VCE = 6 V –0.5 f = 100 MHz Y...
Page 9 0. 2. ax .7 in 5. 0. Unit: mm 0.60 Max 0.45 ± 0.1 0.5 Hitachi Code TO-92 (2) JEDEC Conforms EIAJ Conforms Weight (reference value) 0.25 g
Page 10 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained i...

Manual Details

Brand Hitachi
Pages 10
File Size 49.93 KB
Published June 03, 2026
31 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What is the maximum collector power dissipation rating for this transistor?

The Collector power dissipation (Pc) is rated at 100 mW.

What are the allowed storage temperature ranges for the device?

The storage temperature range (Tstg) is specified from -55 to +150°C.

How high is the typical gain bandwidth product (f_T)?

The Gain Bandwidth Product ($f_T$) has a typical maximum value of 320 MHz.

What must the Collector to Base breakdown voltage (V_CBO) be at a minimum?

The mandatory minimum Collector to base breakdown voltage ($V_{CBO}$) is 30 V.

Related Manuals