Hitachi 2SC4877 User Guide

Summary

This document provides comprehensive technical specifications for the 2SC4877, a reliable NPN transistor designed for high-voltage applications. Featuring a built-in damper diode and an isolated TO-3PFM package, this component is ideal for circuit designers needing robust performance up to 1500V. The manual details critical electrical characteristics including saturation voltages, DC current gain (hFE), maximum power dissipation curves, and operational parameters across varying temperatures, ensuring optimal integration into your electronic device.

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2SC4877 Silicon NPN Triple Diffused

Application

TO–3PFM

TV / character display horizontal deflection output

Features High breakdown voltage 1. Base VCES = 1500 V 2. Collector

Built–in damper diode type 3. Emitter

Isolated package TO-3PFM

Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————————————————————————— Collector to emitter voltage VCES ——————————————————————————————————————————— Emitter to base voltage VEBO ——————————————————————————————————————————— Collector current IC ——————————————————————————————————————————— Collector surge current ic(surge) ——————————————————————————————————————————— Collector power dissipation PC*1 ——————————————————————————————————————————— Junction temperature Tj °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— C to E diode forward current ID ——————————————————————————————————————————— Note: 1. Value at TC = 25°C.

Page Summary Contents For Hitachi 2SC4877 User Guide

Page 1 2SC4877 Silicon NPN Triple Diffused Application TO–3PFM TV / character display horizontal deflection output Features High breakdown voltage 1. Base VCES = 1500 V 2. Collector Built–in damper diode typ...

Page 2 2SC4877 Electrical Characteristics (Ta = 25°C) ol le ct or ow er is si pa tio Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Emitter to base breakdown V(BR)EB...

Page 3 2SC4877 ol le ct or to itt er at ur at io ol ta ge (s at ol le ct or ur re nt DC Current Transfer Ratio Typical Output Characteristics vs. Collector Current Tc = –25°C V = 5 VCE Tc = 25 °C I = 0B as t...

Page 4 2SC4877 ol le ct or to itt er at ur at io ol ta ge (s at (V Collector to Emitter Saturation Voltage vs. Base Current Tc = 25 °C I = 4 AC 6 A 8 A Base Current I (A)B

Manual Details

Brand	Hitachi
Pages	4
File Size	21.74 KB
Published	June 03, 2026

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Frequently Asked Questions

What is the maximum listed collector power dissipation?

The maximum collector power dissipation (Pc) is 50 W.

What voltage range can the device withstand in storage?

The transistor supports a storage temperature range from -55 to +150 °C.

What are the key protective features of this component?

It includes a built-in damper diode type and an isolated package TO-3PFM.

What is the maximum collector voltage rating?

The high breakdown voltage (VCES) rating for the collector is 1500 V.