Hitachi 2SA1122 User Guide
Summary
The 2SA1122 is a high-quality Silicon PNP Epitaxial transistor designed primarily for low-frequency amplifier applications. This comprehensive manual provides essential documentation, including detailed absolute maximum ratings, electrical characteristics (such as collector-emitter and base-emitter voltage breakdown), power dissipation guidelines, and application cautions. It serves professional electrical engineers and hardware designers who require reliable components for building stable and efficient amplification circuits.
Page 1 Text Content
查询2SA1122供应商
2SA1122 Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
1. Emitter 2. Base 3. Collector
Page Summary Contents For Hitachi 2SA1122 User Guide
Manual Details
| Brand | Hitachi |
|---|---|
| Pages | 5 |
| File Size | 20.12 KB |
| Published | June 03, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the maximum junction temperature for the 2SA1122?
The maximum junction temperature (Tj) is 150 °C.
What is the package type and weight of this component?
It uses an Outline MPAK package and has a weight reference value of 0.011 g.
How is the collector power dissipation limited?
The maximum collector power dissipation (Pc) rating allows up to 150 mW, dependent on ambient temperature.
Is this product designed for harsh environments like radiation zones?
No, this product is not designed to be radiation resistant. Extreme care is advised when using it near human life support systems.