Fairchild USB10H Data Handbook
Summary
This high-performance P-Channel MOSFET is engineered using advanced PowerTrench technology for exceptional power dissipation in a very small SuperSOT-6 package. Ideal for system designers, this component excels in load switch applications, battery protection circuits, and general power management where low ON-state resistance and fast switching are critical. The provided manual details all operational metrics, including maximum ratings, comprehensive electrical curves (VDS(on), transient response), and handling guidelines necessary for precise circuit integration.
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February 1999
USB10H Dual P-Channel 2.5V Specified Power Trench MOSFET
Features
General Description These P-Channel 2.5V specified MOSFETs are produced -1.9 A, -20 V. R = 0.170 Ω @ V = -4.5 V
DS(on) GS
using Fairchild Semiconductor's advanced Power Trench
= 0.250Ω @ V = -2.5 V process that has been especially tailored to minimize DS(on) GS
on-state resistance and yet maintain low gate charge for
superior switching performance. Low gate charge (3 n C typical).
Fast switching speed.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications
• High performance trench technology for extremely
where the bigger more expensive SO-8 and TSSOP-8
low RDS(ON).
packages are impractical.
Super SOTTM-6 package: small footprint (72% smaller
Applications
than standard SO-8); low profile (1mm thick).
Load switch Battery protection • Power management
Super SOT -6TM
Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±8 ID Drain Current - Continuous (Note 1a) -1.9
- Pulsed -5
PD Power Dissipation for Single Operation (Note 1a) 0.96 (Note 1b) 0.9 (Note 1c) 0.7
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W
Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity
.306 USB10H 7’’ 8mm 3000 units
1999 Fairchild Semiconductor Corporation USB10H Rev. C
Page Summary Contents For Fairchild USB10H Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 234.33 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current of the USB10H?
The maximum continuous drain current is -1.9 A.
What package does the USB10H use?
It uses the SuperSOT-6 package, 72% smaller than SO-8 and 1mm thick.
What are typical applications for the USB10H?
Typical applications include load switch, battery protection, and power management.
What is the drain-source breakdown voltage of the USB10H?
The drain-source breakdown voltage is -20 V.