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Fairchild MJD42C Data Handbook

Summary

The MJD42C is a robust PNP Epitaxial Silicon Transistor specifically designed for general-purpose, low-speed switching and amplification applications. This comprehensive technical datasheet serves as a critical resource, detailing all electrical performance curves, absolute maximum ratings, operational parameters, and package dimensions. It is essential documentation for electronics engineers and hardware designers who require precise component specifications for integrating the transistor into power and control circuit designs.

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查询MJD42_MJD42C供应商

MJD42C

General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I.PACK, “- I” Suffix) Electrically Similar to Popular TIP42C D-PAK I-PAK1

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -100

VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current (DC) -6 ICP Collector Current (Pulse) -10

IB Base Current -2

Collector Dissipation (TC=25°C)

Collector Dissipation (Ta=25°C) 1.75

TJ Junction Temperature °C TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage IC = - 30m A, IB = 0 -100

ICEO Collector Cut-off Current VCE = -60V, IB = 0 -50 µA ICES Collector Cut-off Current VCE = -100V, VBE = 0 -10 µA IEBO Emitter Cut-off Current VBE = -5V, IC = 0 -0.5 m A * DC Current Gain VCE = -4V, IC = -0.3A

VCE = -4V, IC = -3A

VCE(sat) * Collector-Emitter Saturation Voltage IC = -6A, IB = -600m A -1.5 VBE(on) * Base-Emitter ON Voltage VCE = -6A, IC = -4A -2 f T Current Gain Bandwidth Product VCE = -10V, IC = -500m A MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

Page Summary Contents For Fairchild MJD42C Data Handbook

Page 1 查询MJD42_MJD42C供应商 MJD42C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I.PACK, “- I” Suffix) Electrically Similar to P...
Page 2 Typical Characteristics ,t [µ s] IM IT IN CE = -2V = 10 I -1 (sat) CE (sat) [A], COLLECTOR CURRENT [A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-...
Page 3 Typical Characteristics (Continued) [W IS IP IO C], CASE TEMPERATURE Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
Page 4 Package Demensions D-PAK MAX0.96 0.76 ±0.10 2.30TYP 2.30TYP [2.30±0.20] [2.30±0.20] 2.30 ±0.20 (0 6.60 ±0.20 .7 0) (5.34) (0 .1 0) (3 .0 5) (0 .9 0) (5.04) IN 0. (1 .0 (1.50) 0) (2XR0.25) Dimensions i...
Page 5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST...

Manual Details

Brand Fairchild
Pages 5
File Size 45.33 KB
Published May 28, 2026
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Frequently Asked Questions

Can this product be used as a critical component in life support systems?

No, the use of Fairchild’s products is not authorized for critical components in life support devices without express written approval.

What is the maximum rated collector dissipation at 25°C?

The absolute maximum ratings specify a collector dissipation (DC) of 20 W at a junction temperature (Tj) of 25°C.

What are the key package dimensions provided in this manual?

The D-PAK package is listed with dimensions of 6.60 ±0.20 mm by 5.34 ±0.30 mm.