Fairchild QSB320F Data Handbook
Summary
This surface mount silicon infrared phototransistor is designed for reliable light detection applications requiring high sensitivity and a wide 120° reception angle. Comprehensive technical data covers essential electrical and optical characteristics, including operational limits, breakdown voltages, dark current measurements, and performance curves against varying temperatures and emitter-collector voltages. This manual serves as an indispensable resource for engineers designing circuit boards that integrate precise, dependable infrared sensing components.
Page 1 Text Content
QSB320F
SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS 0.118 (3.0)
FEATURES SCHEMATIC
• Surface Mount PLCC-2 Package
COLLECTOR
COLLECTOR • Wide Reception Angle, 120°
0.005 (.12) • High Sensitivity
• Phototransistor Output
NOTES:
• Matched Emitter: QEB421
EMITTER
1. Dimensions for all drawings are in inches (millimeters).
• Daylight Filter
2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified.
NOTES
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
1. Derate power dissipation linearly 2.2 m W/°C above 25°C.
Parameter Symbol Rating Unit
2. RMA flux is recommended.
Operating Temperature TOPR -55 to +100 °C
3. Methanol or isopropyl alcohols
Storage Temperature TSTG -55 to +100 °C are recommended as cleaning
Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C agents. 4. = 940 nm.
Collector Emitter Voltage VCE Emitter Collector Voltage VEC Collector Current IC m A Power Dissipation(1) PD m W
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Peak Sensitivity Wavelength PS nm Wavelength Sensitivity Range SR nm Reception Angle Deg. Collector Emitter Dark Current VCE = 25 V, Ee = 0 ID n A Collector Emitter Breakdown IC = 1 m A BVCEO Emitter Collector Breakdown IE = 100 µA BVECO On-State Collector Current Ee = 0.1 m W/cm2(4), VCE = 5 V IC (ON) µA Saturation Voltage Ee = 0.5 m W/cm2(4), IC = 0.05 m A VCE (SAT) 0.3 Rise Time VCC = 5 V, RL = 100 tr µs
Fall Time IC = 1 m A tf µs
2001 Fairchild Semiconductor Corporation DS300387 2/26/01 1 OF 3 www.fairchildsemi.com
Page Summary Contents For Fairchild QSB320F Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 3 |
| File Size | 50.13 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
Can this phototransistor be used in life support systems?
No, its use in life support devices or systems requires express written approval from the President of Fairchild Semiconductor Corporation.
What cleaning agents are recommended for maintenance?
Methanol or isopropyl alcohols are recommended as cleaning agents for this device.
If operating above 25°C, how should power dissipation be derated?
Power dissipation must be derated linearly at a rate of 2.2 mW/°C when the temperature exceeds 25°C.
What is the specified operating temperature range (OPR) for this device?
The absolute maximum operating temperature ranges from -55 to +100 °C.