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Fairchild QSB320 Data Handbook

Summary

This high-sensitivity QSB320 phototransistor is a surface mount silicon component designed for reliable infrared light detection across 400–1000 nm. Featuring a wide 120° reception angle and optimal performance in optical sensing applications, it is ideal for engineers building robust proximity or light monitoring circuits. The accompanying manual provides comprehensive technical documentation, including detailed electrical characteristics, absolute maximum ratings, and critical performance graphs necessary for confident integration into your next electronic design.

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QSB320

SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR

PACKAGE DIMENSIONS 0.118 (3.0)

FEATURES SCHEMATIC

• Surface Mount PLCC-2 Package

COLLECTOR

COLLECTOR • Wide Reception Angle, 120°

0.005 (.12) • High Sensitivity

• Phototransistor Output

NOTES:

• Matched Emitter: QEB421

EMITTER

1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified.

NOTES

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

1. Derate power dissipation linearly 2.2 m W/°C above 25°C.

Parameter Symbol Rating Unit

2. RMA flux is recommended.

Operating Temperature TOPR -55 to +100 °C

3. Methanol or isopropyl alcohols

Storage Temperature TSTG -55 to +100 °C are recommended as cleaning

Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C agents. 4. = 940 nm.

Collector Emitter Voltage VCE Emitter Collector Voltage VEC Collector Current IC m A Power Dissipation(1) PD m W

ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Peak Sensitivity Wavelength PS nm Wavelength Sensitivity Range SR nm Reception Angle Deg. Collector Emitter Dark Current VCE = 25 V, Ee = 0 ID n A Collector Emitter Breakdown IC = 1 m A BVCEO Emitter Collector Breakdown IE = 100 µA BVECO On-State Collector Current Ee = 0.1 m W/cm2(4), VCE = 5 V IC (ON) µA Saturation Voltage Ee = 0.5 m W/cm2(4), IC = 0.05 m A VCE (SAT) 0.3 Rise Time VCC = 5 V, RL = 100 tr µs

Fall Time IC = 1 m A tf µs

 2001 Fairchild Semiconductor Corporation DS300386 2/26/01 1 OF 3 www.fairchildsemi.com

Page Summary Contents For Fairchild QSB320 Data Handbook

Page 1 QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 (3.0) FEATURES SCHEMATIC • Surface Mount PLCC-2 Package COLLECTOR COLLECTOR • Wide Reception Angle, 120° 0.005 (.12) • Hi...
Page 2 QSB320 -N or al iz ed ig ht ur re nt SURFACE MOUNT SILICON -N or al iz ed ar ur re nt INFRARED PHOTOTRANSISTOR Fig.1 Dark Current Vs. Ambient Temperature Fig.2 Dark Current Vs. Collector Emitter Volta...
Page 3 QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTI...

Manual Details

Brand Fairchild
Pages 3
File Size 50.03 KB
Published June 18, 2026
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Frequently Asked Questions

What is the peak sensitivity wavelength of the QSB320?

The peak sensitivity wavelength is 880 nm.

What matched emitter works with this phototransistor?

The matched emitter is the QEB421.

What is the operating temperature range for the QSB320?

The operating temperature range is -55 to +100 °C.

What is the maximum collector current rating?

The maximum collector current is 15 mA.