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Fairchild NM34W02 Data Handbook

Summary

The NM34W02 is a reliable, 2K-bit serial EEPROM memory specifically engineered for Serial Presence Detect (SPD) applications in PC100 compliant modules. It provides non-volatile data storage with robust features like full array write protection and low power consumption options (L/LZ). This manual offers comprehensive technical details, including the I²C communication protocol, detailed electrical specifications, thermal ratings, and multiple package types. It is ideal for memory controllers, microprocessor designers, and embedded systems requiring reliable identification and management of PC main memory modules.

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34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect

March 1999

NM34W02 2K-Bit Standard 2-Wire Bus Interface Serial EEPROM with Full Array Write Protect Designed with Permanent Write-Protection for First 128 Bytes for Serial Presence Detect Application on Memory Modules (PC100 Compliant) General Description Features The NM34W02 is 2048 bits of CMOS non-volatile electrically

PC100 Compliant

erasable memory. This device is specifically designed to support

Extended Operating Voltage: 2.7V-5.5V

Serial Presence Detect circuitry in memory modules. This com-

munications protocol uses CLOCK (SCL) and DATA I/O (SDA) Software Write-Protection for first 128 bytes

lines to synchronously clock data between the master (for ex- Hardware Write-Protection for entire memory array ample a microprocessor) and the slave EEPROM device(s).

200 µA active current typical

The contents of the non-volatile memory allows the CPU to – 1.0 µA standby current typical (L) determine the capacity of the module and the electrical character- – 0.1 µA standby current typical (LZ) istics of the memory devices it contains. This will enable "plug and

IIC compatible interface

play" capability as the module is read and PC main memory

– Provides bidirectional data transfer protocol

resources utilized through the memory controller.

Sixteen byte page write mode

The first 128 bytes of the memory of the NM34W02 can be

– Minimizes total write time per byte

permanently Write Protected by writing to the "WRITE PROTECT"

Self timed write cycle

Register. Write Protect implementation details are described

- Typical write cycle time of 6ms

under the section titled Addressing the WP Register. In addition, like the NM24Wxx product family, the entire memory array can be Endurance: 1,000,000 data changes write-protected through "WP" pin.

Data retention greater than 40 years

The NM34W02 is available in a JEDEC standard TSSOP package

Packages available: 8-pin TSSOP and 8-pin SO

for low profile memory modules for systems requiring efficient

Temperature Ranges: Commercial and Extended

space utilization such as in a notebook computer. Two options are available: L - Low Voltage and LZ - Low Power, allowing the part to be used in systems where battery life is of primary importance.

Block Diagram

VCC VSS WP

H.V. GENERATION

START CYCLE

TIMING &CONTROL

SDA START STOP LOGIC

CONTROL LOGIC

SLAVE ADDRESS

E2PROM

REGISTER &

ARRAY

SCL COMPARATOR XDEC

LOAD INC

A2 WORD A1

ADDRESS

COUNTER

R/W YDEC

Device Address Bits

Write Protect CK

Register DOUT

DIN DATA REGISTER

DS500078-1

© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com NM34W02 Rev. C.2

Page Summary Contents For Fairchild NM34W02 Data Handbook

Page 1 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect March 1999 NM34W02 2K-Bit Standard 2-Wire Bus Interface Serial EEPROM with Full Array Write Protect Designed w...
Page 2 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Connection Diagram SO (M8) and TSSOP (MT8) Package A0 VCC A1 WP NM34W02 A2 SCL VSS SDA DS500078-2 Top View See...
Page 3 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Product Specifications Absolute Maximum Ratings Operating Conditions Ambient Storage Temperature –65°C to +150...
Page 4 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect AC Conditions of Test Input Pulse Levels VCC x 0.1 to VCC x 0.9 Input Rise and Fall Times 10 ns Input & Ou...
Page 5 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Bus Timing t HIGH t LOW t LOW t SU:STO t SU:STA t HD:DAT t SU:DAT t HD:STA t BUF t AA t DH DS500078-5 Backgrou...
Page 6 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Device Address Pins Memory Size Number of A0 A1 A2 Page Blocks NM34W02 ADR ADR ADR 2048 Bits Pin Descriptions ...
Page 7 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Write Cycle Timing SDA 8th BIT ACK WORD n t WR STOP START CONDITION CONDITION DS500078-7 DATA STABLE DATA CHAN...
Page 8 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Device Addressing (Continued) and the previously written data will be overwritten. As with the byte write oper...
Page 9 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Write Protect Scheme (Continued) Bus Activity: SLAVE WORD Master ADDRESS ADDRESS DATA SDA Line DS500078-15 Byt...
Page 10 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Current Address Read (Figure 8) Bus Activity: SLAVE Master ADDRESS SDA Line DATA DS500078-18 Random Read (Figu...
Page 11 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Physical Dimensions inches (millimeters) unless otherwise noted Lead #1 IDENT x 45° 8° Max, Typ. All leads Sea...
Page 12 34W 02 2K -B it S tan ard 2-W ire B s In terface S erial E ith ll A rray W rite P ro tect Physical Dimensions inches (millimeters) unless otherwise noted (7.72) Typ(4.16) Typ (1.78) Typ 0.123 - 0.128 ...

Manual Details

Brand Fairchild
Pages 12
File Size 93.08 KB
Published July 06, 2026
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Frequently Asked Questions

What interface lines does the EEPROM use for communication?

It utilizes CLOCK (SCL) and DATA I/O (SDA) lines to communicate between master and slave devices.

Does this memory have permanent write protection features?

Yes, it includes hardware write-protection for the first 128 bytes, in addition to full array write-protect capability via the 'WP' pin.

What is the expected lifetime or endurance of the memory?

The device offers high durability with an endurance rating of 1,000,000 data changes and data retention greater than 40 years.

Can this component be used in low power systems?

Yes, it provides Low Voltage (L) and Low Power (LZ) options, allowing operation down to 2.7V in battery-sensitive applications.