Fairchild MMBD1201 1203 1204 1205 Data Handbook

MMBD1201 / 1203 / 1204 / 1205

Connection Diagrams

MARKING

MMBD1201 24 MMBD1203 26

SOT-23

MMBD1204 27 MMBD1205 28

Small Signal Diodes Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 m A IFSM Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0

Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 350 m W RθJA Thermal Resistance, Junction to Ambient 357 °C/W

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units VR Breakdown Voltage IR = 100 µA 100 V

VF Forward Voltage IF = 1.0 m A m V IF = 10 m A m V IF = 100 m A m V

IF = 200 m A 0.87 1.0 IF = 300 m A 1.1

IR Reverse Current VR = 20 V n A

VR = 50 V n A

VR = 50 V, TA = 150°C 5.0 µA

CT Total Capacitance VR = 0, f = 1.0 MHz 2.0 p F trr Reverse Recovery Time IF = IR = 10 m A, IRR = 1.0 m A,

RL = 100 Ω 4.0 ns

2001 Fairchild Semiconductor Corporation MMBD1200 series, Rev. C