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Fairchild KSE350 Data Handbook

Summary

Introducing the KSE350 NPN Epitaxial Silicon Transistor, a high-reliability component designed for general-purpose power applications, including demanding switching and transformer circuits. This comprehensive datasheet provides essential information for engineers and designers, detailing absolute maximum ratings, electrical performance curves, saturation voltages, and physical dimensions in the TO-126 package. Use this resource to ensure optimal circuit design and reliable integration of high-voltage complementary power solutions into your electronic systems.

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KSE350

High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE340

TO-126

1. Emitter 2.Collector 3.Base

PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300

VCEO Collector-Emitter Voltage - 300 Emitter-Base Voltage - 5

Collector Current - 500 m A

Collector Dissipation (TC=25°C)

Junction Temperature °C

TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = - 1m A, IB = 0 -300

ICBO Collector Cut-off Current VCB = - 300V, IE = 0 -100 µA Emitter Cut-off Current VBE = - 3V, IC = 0 -100 µA

DC Current Gain VCE = - 10V, IC = - 50m A

©2000 Fairchild Semiconductor International Rev. A, February 2000

Page Summary Contents For Fairchild KSE350 Data Handbook

Page 1 KSE350 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE340 TO-126 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Trans...
Page 2 Typical Characteristics [A LE -1 (sat) CE (sat) [A], COLLECTOR CURRENT [A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage [...
Page 3 Package Demensions TO-126 +0.10 2.28TYP 2.28TYP 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Hi S...

Manual Details

Brand Fairchild
Pages 4
File Size 38.37 KB
Published July 16, 2026
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Frequently Asked Questions

What is the maximum Collector-Emitter voltage I can use with this transistor?

The absolute maximum rating for CEO is 300 V, assuming an ambient temperature of 25°C.

Does Fairchild Guarantee that these products are safe for critical life support systems?

No. Products require explicit written approval from Fairchild Semiconductor International to be used as critical components in life support devices or systems.

How should I calculate the maximum power this device can dissipate?

Always refer to Figure 4 (Power Derating) and ensure operation stays within the Safe Operating Area limits provided by the datasheet curves.

What are the typical dimensions for the TO-126 package?

The typical length is 8.00 ±0.30 mm, the width is 13.06 ±0.30 mm, and the maximum height is 14.20 mm.