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Fairchild KSD1616 1616A Data Handbook

Summary

This detailed datasheet provides comprehensive specifications for NPN Epitaxial Silicon Power Transistors (KSD1616/1616A). It covers absolute maximum ratings, full electrical characteristics, and typical performance curves essential for circuit designers. This manual is crucial for electrical engineers who require precise operational data—including switching times and current gain—to integrate these high-performance transistors into switching or amplification electronic systems.

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Page 1 Text Content

查询KSD1616供应商

SD 1616/1616A

KSD1616/1616A

Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSB1116/1116A

TO-921

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units

VCBO Collector-Base Voltage : KSD1616

: KSD1616A

VCEO Collector-Emitter Voltage : KSD1616

: KSD1616A

VEBO Emitter-Base Voltage IC Collector Current (DC) ICP * Collector Current (Pulse) PC Collector Power Dissipation 0.75

TJ Junction Temperature °C

TSTG Storage Temperature -55 ~ 150 °C

* PW≤10ms, Duty Cycle < 50%

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units

ICBO Collector Cut-off Current VCB=60V, IE=0 n A IEBO Emitter Cut-off Current VEB=6V, IC=0 n A h FE1 DC Current Gain : KSD1616 VCE=2V, IC=100m A

: KSD1616A

h FE2 VCE=2V, IC=1A VBE (on) * Base-Emitter On Voltage VCE=2V, IC=50m A m V

VCE (sat) * Collector-Emitter Saturation Voltage IC=1A, IB=50m A 0.15 0.3 VBE (sat) * Base-Emitter Saturation Voltage IC=1A, IB=50m A 0.9 1.2 Cob Output Capacitance VCE=10V, IE=0, f=1MHz p F f T Current Gain Bandwidth Product VCE=2V, IC=100m A MHz t ON Turn On Time VCC=10V, IC=100m A 0.07 µs

t STG Storage Time IB1= -IB2=10m A 0.95 µs VBE (off) = -2~-3V

t F Fall Time 0.07 µs

* Pulse Test: PW<350µs, Duty Cycle≤2% Pulsed

h FE1 Classification Classification Y

h FE1 135 ~ 270 200 ~ 400 300 ~ 600

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

Page Summary Contents For Fairchild KSD1616 1616A Data Handbook

Page 1 查询KSD1616供应商 SD 1616/1616A KSD1616/1616A Audio Frequency Power Amplifier &amp; Medium Speed Switching Complement to KSB1116/1116A TO-921 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transisto...
Page 2 SD 1616/1616A Typical Characteristics [m A] , C LL EC TO EN ob [p F] , C PA IT AN E, EN AI 1.0 IB = 5.0m A IB = 300µA 0m IB = 3.0m A IB = 4.5m A 4. IB = 3.5m A IB = 2.5m A IB = 250µA IB = 200µA IB = 2...
Page 3 SD 1616/1616A Typical Characteristics (Continued) [W PO ER IS SI PA TI z] , C EN AI -B AN ID TH VCE = 2V 10ms PW=1ms 200ms IC[m A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Curren...
Page 4 SD 1616/1616A Package Dimensions TO-92 3. 1. 0. +0 .1 1.27TYP 1.27TYP 0.38 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT...

Manual Details

Brand Fairchild
Pages 5
File Size 51.71 KB
Published July 16, 2026
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Frequently Asked Questions

Can I use this component in life support or critical systems?

No, Fairchild’s products are not authorized for use as critical components in life support devices without their express written approval.

What is the maximum Collector-Base Voltage (VCB) rating difference between the two models?

The KSD1616 has a max VCB of 60V, while the KSD1616A model can handle up to 120V.

What is the specified maximum Junction Temperature for operation?

The absolute maximum ratings specify that the junction temperature (TJ) must not exceed 150°C.