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Fairchild KSC2669 Data Handbook

Summary

This detailed datasheet provides full technical specifications for the KSC2669, a high-current gain NPN Epitaxial Silicon Transistor engineered for demanding RF applications. The manual covers electrical characteristics, absolute maximum ratings, and comprehensive performance curves necessary for accurate circuit design. It is essential for electronics engineers and designers working on frequency-sensitive equipment such as FM radios, amplifiers (RF Amp), mixers, converters, and oscillators.

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查询KSC2669供应商

KSC2669

FM RADIO RF AMP, MIX, CONV, OSC, IF AMP High Current Gain Bandwidth Product : f T=250MHz (TYP.)

TO-92S1

1.Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current m A PC Collector Power Dissipation m W

TJ Junction Temperature °C

TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0

BVCEO Collector-Emitter Breakdown Voltage IC=5m A, IB=0

BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 4

ICBO Collector Cut-off Current VCB=30V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=4V, IC=0 0.1 µA h FE DC Current Gain VCE=12V, IC=2m A VBE (on) Base-Emitter On Voltage VCE=6V, IC=1m A 0.65 0.70 0.75 VCE (sat) Collector-Emitter Saturation Voltage IC=10m A, IB=1m A 0.1 0.4 f T Current Gain Bandwidth Product VCE=10V, IC=1m A MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 2.0 3.2 p F

h FE Classification Classification R

h FE 40 ~ 80 70 ~ 140 120 ~ 240

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

Page Summary Contents For Fairchild KSC2669 Data Handbook

Page 1 查询KSC2669供应商 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP High Current Gain Bandwidth Product : f T=250MHz (TYP.) TO-92S1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Ma...
Page 2 SC Typical Characteristics E( sa t), E( sa t)[ V] , S TU AT IO LT AG [m A] , C LL EC TO EN ob [p F] , C AP AC IT AN CE IB = 90µA VCE=12V IB = 80µA IB = 70µA IB = 60µA IB = 50µA IB = 40µA IB = 30µA IB ...
Page 3 SC Package Dimensions TO-92S 0.66 MAX. 1.27TYP 1.27TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 4 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT...

Manual Details

Brand Fairchild
Pages 4
File Size 38.04 KB
Published June 22, 2026
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Frequently Asked Questions

Is this component suitable for life support systems?

No, Fairchild products require express written approval to be used as critical components in life support devices.

What is the maximum recommended collector power dissipation?

The absolute maximum collector power dissipation listed is 200 mW at standard conditions.

What is the typical Current Gain Bandwidth Product (f_T)?

The device has a typical Current Gain Bandwidth Product of 250 MHz.

What package type and dimensions are provided?

It utilizes a TO-92S package with approximate dimensions of 3.70mm by 14.47mm.