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FAIRCHILD HUF75945G3, HUF75945P3, HUF75945S3ST Data Handbook

Summary

Fairchild Semiconductor data sheet for HUF75945G3/P3/S3ST N-Channel UltraFET power MOSFETs rated 38A, 200V with 0.071 ohm on-resistance. Available in TO-247, TO-220AB, and TO-263AB packages. Covers absolute maximum ratings, electrical characteristics, thermal specs, and performance graphs. Includes PSPICE and SABER simulation models. For power electronics engineers designing high-current switching circuits.

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查询HUF75945G3供应商

HUF75945G3, HUF75945P3, HUF75945S3ST

Data Sheet December 2001

38A, 200V, 0.071 Ohm, N-Channel, Ultra FET® Power MOSFETs Packaging

JEDEC TO-247

Features

SOURCE DRAIN

Ultra Low On-Resistance

r DS(ON) = 0.071Ω, VGS = 10V Simulation Models Temperature Compensated PSPICE® and SABER™

DRAIN

Electrical Models

(TAB)

Spice and SABER Thermal Impedance Models www.fairchildsemi.com

JEDEC TO-220AB JEDEC TO-263AB

Peak Current vs Pulse Width Curve

SOURCE DRAIN DRAIN (FLANGE)

UIS Rating Curve

Ordering Information

DRAIN

SOURCE PART NUMBER PACKAGE BRAND

(FLANGE)

HUF75945G3 TO-247 75945G

HUF75945P3 TO-220AB 75945P

Symbol

HUF75945S3ST TO-263AB 75945S

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified

HUF75945G3,HUF75945P3, HUF75945S3ST UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20

Drain Current

Continuous (TC = 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Figure 4 Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.07 W/o C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25o C to 150o C. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

©2001 Fairchild Semiconductor Corporation HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B

Page Summary Contents For FAIRCHILD HUF75945G3, HUF75945P3, HUF75945S3ST Data Handbook

Page 1 查询HUF75945G3供应商 HUF75945G3, HUF75945P3, HUF75945S3ST Data Sheet December 2001 38A, 200V, 0.071 Ohm, N-Channel, Ultra FET® Power MOSFETs Packaging JEDEC TO-247 Features SOURCE DRAIN Ultra Low On-Resist...
Page 2 HUF75945G3, HUF75945P3, HUF75945S3ST Electrical Specifications TC = 25o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakd...
Page 3 HUF75945G3, HUF75945P3, HUF75945S3ST , P θJ , N IZ IS IP IO LT IP IE Typical Performance Curves IM VGS = 10V TC, CASE TEMPERATURE (o C) TC, CASE TEMPERATURE (o C) FIGURE 1. NORMALIZED POWER DISSIPATIO...
Page 4 HUF75945G3, HUF75945P3, HUF75945S3ST IZ IN IN , D IN IS TA Typical Performance Curves (Continued) SINGLE PULSE TJ = MAX RATED TC = 25o C STARTING TJ = 25o C STARTING TJ = 150o C OPERATION IN THIS If R...
Page 5 HUF75945G3, HUF75945P3, HUF75945S3ST IZ IN Typical Performance Curves (Continued) LT 1.3 ID = 250µA VGS = 0V, f = 1MHz 1.2 CISS = CGS + CGD COSS ≅ CDS + CGD 1.0 , G LT CRSS = CGD TJ, JUNCTION TEMPERAT...
Page 6 HUF75945G3, HUF75945P3, HUF75945S3ST Test Circuits and Waveforms (Continued) VDD Qg(TOT) VGS = 20V VGS Qg(10) VGS VGS = 10V DUT VGS = 2V Ig(REF) Qg(TH) Qgs Qgd Ig(REF) FIGURE 16. GATE CHARGE TEST CIRC...
Page 7 HUF75945G3, HUF75945P3, HUF75945S3ST PSPICE Electrical Model .SUBCKT HUF75945 2 1 3 ; rev 13 October 2000 CA 12 8 6.6e-9 CB 15 14 6.5e-9 CIN 6 8 3.80e-9 DBODY 7 5 DBODYMOD LDRAIN DBREAK 5 11 DBREAKMOD...
Page 8 HUF75945G3, HUF75945P3, HUF75945S3ST SABER Electrical Model REV 13 October 2000 template huf75945 n2,n1,n3 electrical n2,n1,n3 var i iscl dp..model dbodymod = (isl = 2.8e-12, rs = 3.0e-3, xti = 5.5, t...
Page 9 HUF75945G3, HUF75945P3, HUF75945S3ST SPICE Thermal Model th JUNCTION REV 13 October 2000 HUF75945T CTHERM1 th 6 6.45e-3 CTHERM2 6 5 3.00e-2 RTHERM1 CTHERM1 CTHERM3 5 4 1.40e-2 CTHERM4 4 3 1.65e-2 CTHE...
Page 10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST...

Manual Details

Brand Fairchild
Pages 10
File Size 210.53 KB
Published June 17, 2026
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Frequently Asked Questions

What are the package types available for this MOSFET?

It is available in TO-247, TO-220AB, and TO-263AB packages.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current (I_D) at 25°C with V_GS=10V is 38A.

What is the typical on-resistance for this device?

The typical drain-to-source on-resistance (r_DS(ON)) is 0.071Ω at V_GS=10V, I_D=38A.

What is the maximum gate-to-source voltage rating?

The absolute maximum gate-to-source voltage (V_GS) rating is ±20V.

Who manufactures the HUF75945G3?

The manufacturer of the HUF75945G3 is Fairchild Semiconductor Corporation.