Fairchild HUF75939P3, P3ST Data Handbook
Summary
This comprehensive technical datasheet details the performance and specifications for the UltraFET® Power MOSFETs HUF75939P3/HUF75939S3ST. The manual provides engineers with critical data, including absolute maximum ratings, on-state resistance ($\text{R}_{\text{DS}(\text{ON})}$), thermal impedance models, and detailed switching parameters (such as $\text{Q}_{\text{g}}$). It is an essential resource for power electronics designers selecting reliable, high-capacity semiconductor components for demanding industrial and circuit applications.
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HUF75939P3, HUF75939S3ST
Data Sheet December 2001
22A, 200V, 0.125 Ohm, N-Channel, Ultra FET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB
Ultra Low On-Resistance
SOURCE DRAIN
r DS(ON) = 0.125Ω, VGS = 10V
DRAIN (FLANGE) GATE
Simulation Models GATE Temperature Compensated PSPICE® and SABER© SOURCE Electrical Models Spice and SABER© Thermal Impedance Models
DRAIN (FLANGE) www.fairchildsemi.com
HUF75939P3
HUF75939S3ST Peak Current vs Pulse Width Curve
UIS Rating Curve
Symbol
Ordering Information PART NUMBER PACKAGE BRAND HUF75939P3 TO-220AB 75939P
HUF75939S3ST TO-263AB 75939S
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified
HUF75939P3, HUF75939S3ST UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 Drain Current
Continuous (TC = 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/o C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTE: 1. TJ = 25o C to 150o C. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation HUF75939P3, HUF75939S3ST Rev. B
Page Summary Contents For Fairchild HUF75939P3, P3ST Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 197.00 KB |
| Published | July 22, 2026 |
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