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FAIRCHILD HUF75645P3, HUF75645S3S Data Handbook

Summary

Discover the HUF75645 Power MOSFET, a high-performance N-Channel transistor engineered for demanding power switching applications. This component offers exceptional capabilities, including ultra-low on-resistance and robust current handling up to 75A at 100V. The accompanying datasheet is a comprehensive guide, detailing critical electrical specifications (such as breakdown voltage $\text{BV}_{\text{DSS}}$), precise thermal characteristics, detailed switching times ($t_{\text{r}}$, $t_{\text{f}}$), and packaging options (TO-220AB/TO-263AB). This technical resource is essential for power electronics engineers designing efficient, reliable DC switching circuits.

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查询HUF75645P3供应商

HUF75645P3, HUF75645S3S

Data Sheet December 2001

75A, 100V, 0.014 Ohm, N-Channel, Ultra FET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB

Features

SOURCE DRAIN

DRAIN (FLANGE) Ultra Low On-Resistance

r DS(ON) = 0.014Ω, VGS = 10V

GATE Simulation Models

SOURCE Temperature Compensated PSPICE® and SABER™ Electrical Models

DRAIN

(FLANGE) Spice and Saber Thermal Impedance Models www.fairchildsemi.com

HUF75645P3 HUF75645S3S

Peak Current vs Pulse Width Curve UIS Rating Curve

Symbol

Ordering Information PART NUMBER PACKAGE BRAND HUF75645P3 TO-220AB 75645P HUF75645S3S TO-263AB 75645S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75645S3ST.

Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified

HUF75645P3, HUF75645S3S UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 Drain Current

Continuous (TC= 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC= 100o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Figure 4 Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.07 W/o C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25o C to 150o C. CAUTION: Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation HUF75645P3, HUF75645S3S Rev. B

Page Summary Contents For FAIRCHILD HUF75645P3, HUF75645S3S Data Handbook

Page 1 查询HUF75645P3供应商 HUF75645P3, HUF75645S3S Data Sheet December 2001 75A, 100V, 0.014 Ohm, N-Channel, Ultra FET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) ...
Page 2 HUF75645P3, HUF75645S3S Electrical Specifications TC = 25o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage B...
Page 3 HUF75645P3, HUF75645S3S , P θJ , N IZ IS IP IO LT IP IE Typical Performance Curves IM VGS = 10V TC, CASE TEMPERATURE (o C) TC, CASE TEMPERATURE (o C) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIG...
Page 4 HUF75645P3, HUF75645S3S IZ IN , D IN , D IN Typical Performance Curves (Continued) IS TA If R = 0 t AV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 t AV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ST...
Page 5 HUF75645P3, HUF75645S3S IZ IN Typical Performance Curves (Continued) ID = 250µA VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD , G LT CRSS = CGD TJ, JUNCTION TEMPERATURE (o C) VDS, DRAIN TO SOUR...
Page 6 HUF75645P3, HUF75645S3S Test Circuits and Waveforms BVDSS VARY t P TO OBTAIN IAS REQUIRED PEAK IAS RG 0V IAS 0.01Ω FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS VDD Qg...
Page 7 HUF75645P3, HUF75645S3S PSPICE Electrical Model .SUBCKT HUF75645 2 1 3 ; rev 21 May 1999 CA 12 8 5.31e-9 CB 15 14 5.31e-9 CIN 6 8 3.56e-9 DBODY 7 5 DBODYMOD LDRAIN DBREAK 5 11 DBREAKMOD DPLCAP DRAIN D...
Page 8 HUF75645P3, HUF75645S3S SABER Electrical Model REV 21 May 1999 template ta75645 n2,n1,n3 electrical n2,n1,n3 var i iscl d..model dbodymod = (is = 3.00e-12, cjo = 5.32e-9, tt = 7.4e-8, xti = 5, m = 0.6...
Page 9 HUF75645P3, HUF75645S3S SPICE Thermal Model th JUNCTION REV 28 July 1999 HUF75645T RTHERM1 CTHERM1 CTHERM1 th 6 8.80e-3 CTHERM2 6 5 2.50e-2 CTHERM3 5 4 2.70e-2 CTHERM4 4 3 3.70e-2 CTHERM5 3 2 4.40e-2 ...
Page 10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST...