FAIRCHILD HUF75645P3, HUF75645S3S Data Handbook
Summary
Discover the HUF75645 Power MOSFET, a high-performance N-Channel transistor engineered for demanding power switching applications. This component offers exceptional capabilities, including ultra-low on-resistance and robust current handling up to 75A at 100V. The accompanying datasheet is a comprehensive guide, detailing critical electrical specifications (such as breakdown voltage $\text{BV}_{\text{DSS}}$), precise thermal characteristics, detailed switching times ($t_{\text{r}}$, $t_{\text{f}}$), and packaging options (TO-220AB/TO-263AB). This technical resource is essential for power electronics engineers designing efficient, reliable DC switching circuits.
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HUF75645P3, HUF75645S3S
Data Sheet December 2001
75A, 100V, 0.014 Ohm, N-Channel, Ultra FET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB
Features
SOURCE DRAIN
DRAIN (FLANGE) Ultra Low On-Resistance
r DS(ON) = 0.014Ω, VGS = 10V
GATE Simulation Models
SOURCE Temperature Compensated PSPICE® and SABER™ Electrical Models
DRAIN
(FLANGE) Spice and Saber Thermal Impedance Models www.fairchildsemi.com
HUF75645P3 HUF75645S3S
Peak Current vs Pulse Width Curve UIS Rating Curve
Symbol
Ordering Information PART NUMBER PACKAGE BRAND HUF75645P3 TO-220AB 75645P HUF75645S3S TO-263AB 75645S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75645S3ST.
Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified
HUF75645P3, HUF75645S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 Drain Current
Continuous (TC= 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC= 100o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Figure 4 Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.07 W/o C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25o C to 150o C. CAUTION: Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUF75645P3, HUF75645S3S Rev. B
Page Summary Contents For FAIRCHILD HUF75645P3, HUF75645S3S Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 202.58 KB |
| Published | July 10, 2026 |
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