Fairchild HUF75617D3, HUF75617D3S Data Handbook
Summary
This datasheet details the HUF75617D3 N-Channel Power MOSFET, featuring ultra-low on-resistance (0.090Ω) designed for high-efficiency power switching circuits. The comprehensive manual provides essential electrical specifications, including critical performance metrics such as absolute maximum ratings, detailed thermal management data ($\theta_{JA}$), and precise fast switching characteristics. Designed for professional engineers specializing in power electronics or motor drive applications, this guide offers the necessary parameters (e.g., gate charge, rise/fall times) to ensure reliable circuit design using TO-251/TO-252 packages.
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HUF75617D3, HUF75617D3S
Data Sheet December 2001
16A, 100V, 0.090 Ohm, N-Channel, Ultra FET® Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA
Features Ultra Low On-Resistance
SOURCE
DRAIN
DRAIN
r DS(ON) = 0.090Ω, VGS = 10V
GATE (FLANGE)
Simulation Models
Temperature Compensated PSPICE® and SABER™
SOURCE Electrical Models
DRAIN (FLANGE) Spice and SABER Thermal Impedance Models
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HUF75617D3 HUF75617D3S
Peak Current vs Pulse Width Curve UIS Rating Curve
Symbol
Ordering Information PART NUMBER PACKAGE BRAND HUF75617D3 TO-251AA 75617D
HUF75617D3S TO-252AA 75617D
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75617D3ST.
Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified
HUF75617D3, HUF75617D3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20
Drain Current
Continuous (TC = 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.43 W/o C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTE: TJ = 25o C to 150o C. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUF75617D3 Rev. B
Page Summary Contents For Fairchild HUF75617D3, HUF75617D3S Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 195.40 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
How do I order the variant in tape and reel?
To obtain the variant in tape and reel, such as HUF75617D3ST, you must use the entire part number and add the suffix T S when ordering.
What is the maximum continuous drain current at 25 degrees Celsius?
The continuous draining current (I(DS)) is typically rated at 16 A at 25 degrees C and V = 10V.
Can this MOSFET withstand temporary overcurrents?
Yes, its capability is defined by the Pulsed Drain Current (I(DM)) and its figure ratings for UIS (Pulsed Avalanche Rating).
What are the recommended operating temperature limits?
The device has an operating and storage temperature range of -55 to 175 degrees C.