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Fairchild HUF75617D3, HUF75617D3S Data Handbook

Summary

This datasheet details the HUF75617D3 N-Channel Power MOSFET, featuring ultra-low on-resistance (0.090Ω) designed for high-efficiency power switching circuits. The comprehensive manual provides essential electrical specifications, including critical performance metrics such as absolute maximum ratings, detailed thermal management data ($\theta_{JA}$), and precise fast switching characteristics. Designed for professional engineers specializing in power electronics or motor drive applications, this guide offers the necessary parameters (e.g., gate charge, rise/fall times) to ensure reliable circuit design using TO-251/TO-252 packages.

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查询HUF75617D3供应商

HUF75617D3, HUF75617D3S

Data Sheet December 2001

16A, 100V, 0.090 Ohm, N-Channel, Ultra FET® Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA

Features Ultra Low On-Resistance

SOURCE

DRAIN

DRAIN

r DS(ON) = 0.090Ω, VGS = 10V

GATE (FLANGE)

Simulation Models

Temperature Compensated PSPICE® and SABER™

SOURCE Electrical Models

DRAIN (FLANGE) Spice and SABER Thermal Impedance Models

www.fairchildsemi.com

HUF75617D3 HUF75617D3S

Peak Current vs Pulse Width Curve UIS Rating Curve

Symbol

Ordering Information PART NUMBER PACKAGE BRAND HUF75617D3 TO-251AA 75617D

HUF75617D3S TO-252AA 75617D

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75617D3ST.

Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified

HUF75617D3, HUF75617D3S UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20

Drain Current

Continuous (TC = 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.43 W/o C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

NOTE: TJ = 25o C to 150o C. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation HUF75617D3 Rev. B

Page Summary Contents For Fairchild HUF75617D3, HUF75617D3S Data Handbook

Page 1 查询HUF75617D3供应商 HUF75617D3, HUF75617D3S Data Sheet December 2001 16A, 100V, 0.090 Ohm, N-Channel, Ultra FET® Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance SOUR...
Page 2 HUF75617D3 Electrical Specifications TC = 25o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250...
Page 3 HUF75617D3 IS IP IO LT IP IE , P , N IZ Typical Performance Curves VGS = 10V TC, CASE TEMPERATURE (o C) TC, CASE TEMPERATURE (o C) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONT...
Page 4 HUF75617D3 IZ IN , D IN , D IN IS TA Typical Performance Curves (Continued) SINGLE PULSE If R = 0 TJ = MAX RATED t AV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 TC = 25o C t AV = (L/R)ln[(IAS*R)/(1.3...
Page 5 HUF75617D3 IZ IN Typical Performance Curves (Continued) LT VGS = 0V, f = 1MHz ID = 250µA CISS = CGS + CGD COSS ≅ CDS + CGD , G LT CRSS = CGD TJ, JUNCTION TEMPERATURE (o C) VDS, DRAIN TO SOURCE VOLTAGE...
Page 6 HUF75617D3 Test Circuits and Waveforms BVDSS VARY t P TO OBTAIN IAS REQUIRED PEAK IAS RG 0V IAS 0.01Ω FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS VDD Qg(TOT) VGS = 2...
Page 7 HUF75617D3 PSPICE Electrical Model .SUBCKT HUF75617d3 2 1 3 ; rev 24May 2000 CA 12 8 9.9e-10 CB 15 14 1.0e-9 CIN 6 8 5.4e-10 DBODY 7 5 DBODYMOD LDRAIN DBREAK 5 11 DBREAKMOD DPLCAP DRAIN DPLCAP 10 5 DP...
Page 8 HUF75617D3 SABER Electrical Model REV 24 May 2000 template huf75617d3 n2,n1,n3 electrical n2,n1,n3 var i iscl dp..model dbodymod = (isl = 6.0e-13, rs = 11.0e-3, xti = 4.5, trs1 = 1.1e-3, trs2 = 7.1e-6...
Page 9 HUF75617D3 SPICE Thermal Model REV 24 May 2000 th JUNCTION HUF75617D CTHERM1 th 6 1.00e-3 CTHERM2 6 5 4.00e-3 CTHERM3 5 4 4.00e-3 RTHERM1 CTHERM1 CTHERM4 4 3 3.60e-3 CTHERM5 3 2 7.00e-3 CTHERM6 2 tl 5...
Page 10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST...

Manual Details

Brand Fairchild
Pages 10
File Size 195.40 KB
Published July 06, 2026
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Frequently Asked Questions

How do I order the variant in tape and reel?

To obtain the variant in tape and reel, such as HUF75617D3ST, you must use the entire part number and add the suffix T S when ordering.

What is the maximum continuous drain current at 25 degrees Celsius?

The continuous draining current (I(DS)) is typically rated at 16 A at 25 degrees C and V = 10V.

Can this MOSFET withstand temporary overcurrents?

Yes, its capability is defined by the Pulsed Drain Current (I(DM)) and its figure ratings for UIS (Pulsed Avalanche Rating).

What are the recommended operating temperature limits?

The device has an operating and storage temperature range of -55 to 175 degrees C.