Fairchild HUF75545P3, HUF75545S3, HUF75545S3S Data Handbook
Summary
This comprehensive datasheet details the HUF75545 series UltraFET N-Channel Power MOSFET, a high-efficiency switch designed for demanding power applications. Featuring ultra-low on-resistance ($0.010\Omega$) and robust 75A continuous current handling, this component is specified in multiple packages (TO-220/TO-263). The manual provides detailed engineering data, covering absolute maximum ratings, comprehensive electrical specifications, switching characteristics, thermal management models (PSPICE and SABER), and operating guidelines. It is essential reading for power electronics engineers and designers integrating high-reliability, low-resistance MOSFETs into circuit designs.
Page 1 Text Content
查询HUF75545S3供应商
HUF75545P3, HUF75545S3, HUF75545S3S
Data Sheet September 2002
75A, 80V, 0.010 Ohm, N-Channel, Ultra FET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB
DRAIN Features
SOURCE
(FLANGE)
DRAIN GATE Ultra Low On-Resistance
r DS(ON) = 0.010Ω, VGS = 10V
Simulation Models
SOURCE
Temperature Compensated PSPICE® and SABER™
DRAIN
Electrical Models
(FLANGE)
HUF75545S3S
Spice and SABER Thermal Impedance Models
HUF75545P3
www.fairchildsemi.com
JEDEC TO-262AA
SOURCE Peak Current vs Pulse Width Curve
DRAIN
DRAIN UIS Rating Curve (FLANGE) GATE
Ordering Information
HUF75545S3
PART NUMBER PACKAGE BRAND Symbol HUF75545P3 TO-220AB 75545P HUF75545S3 TO-262AA 75545S HUF75545S3S TO-263AB 75545S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.
Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified
HUF75545P3, HUF75545S3, HUF75545S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 Drain Current Continuous (TC= 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC= 100o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Figure 4 Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figure 6 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 W/o C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg NOTES: 1. TJ = 25o C to 150o C. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C
Page Summary Contents For Fairchild HUF75545P3, HUF75545S3, HUF75545S3S Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 212.95 KB |
| Published | July 07, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the typical Drain to Source On Resistance (RDS(ON))?
The typical value for R_DS(ON) listed in the specifications is 0.010 Ω.
Can this MOSFET be used in life support systems?
No; its use in life support devices requires express written approval from Fairchild Semiconductor Corporation.
What happens if I operate above 25 degrees Celsius?
You must derate the power dissipation using the provided thermal coefficient calculation (1.8 W/C).
How do I order a TO-263AB variant in tape and reel format?
Add the suffix 'T' to the full part number, for example, HUF75545S3ST.