Fairchild FQPF8N60CF Data Handbook
Summary
The FQPF8N60CF is a high-efficiency, 600V N-Channel MOSFET optimized for demanding power applications. Featuring proprietary planar stripe DMOS technology, this transistor provides superior fast switching capabilities and inherently low gate and output capacitances. The manual details its absolute maximum ratings, precise electrical characteristics (including on-resistance, dynamic parameters, and thermal performance), and usage guidelines. It is engineered for professional use in high-efficiency switched mode power supplies, active power factor correction systems, and electronic lamp ballast circuits requiring reliable performance.
Page 1 Text Content
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好! FQ PF8N 60C F 600V N -C hannel M SFET
February 2006
FRFET
FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect
Low gate charge ( typical 28 n C) transistors are produced using Fairchild’s proprietary, planar Low Crss ( typical 12 p F) stripe, DMOS technology. Fast switching This advanced technology has been especially tailored to 100% avalanche tested minimize on-state resistance, provide superior switching Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
TO-220F
FQPF Series
Absolute Maximum Ratings Symbol Parameter FQPF8N60CFT Units VDSS Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C) 6.26*
- Continuous (TC = 100°C) 3.96*
IDM Drain Current - Pulsed (Note 1) 25*
VGSS Gate-Source Voltage ± 30
EAS Single Pulsed Avalanche Energy (Note 2) m J
IAR Avalanche Current (Note 1) 6.26
EAR Repetitive Avalanche Energy (Note 1) 14.7 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.38 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FQPF8N60CF Units RθJC Thermal Resistance, Junction-to-Case 2.6 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FQPF8N60CF Rev. A
Page Summary Contents For Fairchild FQPF8N60CF Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 763.72 KB |
| Published | June 20, 2026 |
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