Fairchild FQPF3N20 Data Handbook

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FEATURES

BVDSS = −200V

Advanced New Design

RDS(ON) = 2.7Ω

Avalanche Rugged Technology

ID = −2.2A

Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics

TO-220F

Unrivalled Gate Charge: 6.0n C (Typ.) Extended Safe Operating Area Lower RDS(ON): 2.06Ω (Typ.)

1. Gate 2. Drain 3. Source

ABSOLUTE MAXIMUM RATINGS

Symbol Characteristics Value Units

VDSS Drain-to-Source Voltage −200

Continuous Drain Current (TC = 25°C) −2.2

Continuous Drain Current (TC = 100°C) −1.39

IDM Drain Current-Pulsed −8.8

VGS Gate-to-Source Voltage ±30

EAS Single Pulsed Avalanche Energy 150 m J

IAR Avalanche Current −2.2

EAR Repetitive Avalanche Energy 3.2 m J

dv/dt Peak Diode Recovery dv/dt −5.5 V/ns

Total Power Dissipation (TC = 25°C)

Linear Derating Factor 0.26 W/°C

Operating Junction and Storage

TJ, TSTG −55 to +150

Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

THERMAL RESISTANCE

Symbol Characteristics Typ. Max. Units

RθJC Junction-to-Case 3.9

RθJA Junction-to-Ambient 62.5

REV. B

 1999 Fairchild Semiconductor Corporation