Fairchild FQP32N12V2 FQPF32N12V2 Data Handbook
Summary
This datasheet documents the Fairchild Semiconductor FQP32N12V2 and FQPF32N12V2 120V N-Channel MOSFETs built with QFET planar stripe DMOS technology. These enhancement-mode power transistors deliver 32A continuous drain current with an RDS(on) of 0.05Ω at 10V gate drive. Electrical characteristics include low gate charge of typically 41nC, low reverse transfer capacitance of 70pF, and fast switching performance. Both TO-220 (FQP) and TO-220F (FQPF) package variants are 100% avalanche tested with
Page 1 Text Content
FQ P32N 12V2/FQ PF32N 12V2
QFET®
FQP32N12V2/FQPF32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32 A, 120V, RDS(on) = 0.05Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 41 n C) planar stripe, DMOS technology. Low Crss ( typical 70 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
TO-220 TO-220F
SD SD
FQP Series G FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP32N12V2 FQPF32N12V2 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 32 *
- Continuous (TC = 100°C) 23 *
IDM Drain Current - Pulsed (Note 1) 128 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.33 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol Parameter FQP32N12V2 FQPF32N12V2 Units RθJC Thermal Resistance, Junction-to-Case 1.0 3.0 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2003 Fairchild Semiconductor Corporation Rev. A, December 2003
Page Summary Contents For Fairchild FQP32N12V2 FQPF32N12V2 Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 872.30 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What are the maximum operating temperatures for this MOSFET?
The recommended operating temperature range is from -55 to +175 °C.
How does the thermal resistance differ between FQP and FQPF series?
The FQP has a Junction-to-Case (θJC) of 1.0 °C/W, while the FQPF has 3.0 °C/W.
What should be considered when calculating DC continuous drain current at high temperatures?
Drain current is limited by maximum junction temperature and power dissipation should be derated above 25°C.
What are the key benefits of this advanced MOSFET technology according to the manual?
It offers low gate charge (typical 41 nC), low Crss (typical 70 pF), superior switching, and excellent avalanche capability.