Fairchild FQAF12N20 Specifications Manual
Summary
This document is a datasheet for the Fairchild FQAF12P20 200V P-Channel QFET MOSFET. The device features -11.5A continuous drain current, 0.47Ω on-resistance at -10V gate voltage, low gate charge, and fast switching capabilities in a TO-3PF package. The manual provides absolute maximum ratings, thermal characteristics, and electrical specifications. Target users are power electronics engineers designing DC/DC converters and switching power supplies.
Page 1 Text Content
May 2000
QFETTM
FQAF12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 31 n C) planar stripe, DMOS technology. Low Crss ( typical 30 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
TO-3PF
FQAF Series G
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF12P20 Units VDSS Drain-Source Voltage -200 ID Drain Current - Continuous (TC = 25°C) -8.6
- Continuous (TC = 100°C) -5.4
IDM Drain Current - Pulsed (Note 1) -34.4 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) -8.6 EAR Repetitive Avalanche Energy (Note 1) 7.0 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.56 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 1.79 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W
©2000 Fairchild Semiconductor International Rev. B, May 2000
Page Summary Contents For Fairchild FQAF12N20 Specifications Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 629.47 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What are the key specifications of the FQAF12P20 MOSFET?
It's a -200V, -11.5A P-Channel MOSFET with a typical on-resistance (R_DS(on)) of 0.47Ω at V_GS = -10V.
Is this MOSFET suitable for high-efficiency switching converters?
Yes, the datasheet states these devices are well-suited for high efficiency switching DC/DC converters.
What is the maximum power dissipation?
The maximum power dissipation (P_D) is 70W at a case temperature (T_C) of 25°C.
What is the operating temperature range?
The operating junction and storage temperature range is -55°C to +150°C.
What safety information is provided for this component?
It is not authorized for use in life support devices/systems without Fairchild's express written approval.