# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Fairchild FDPF44N25 Data Handbook

Summary

The FDPF44N25 is a high-performance N-Channel MOSFET designed for demanding power applications, featuring superior switching speed and low on-resistance up to 250V/18A. This comprehensive manual provides detailed technical specifications, covering absolute maximum ratings, electrical characteristics (including threshold voltage and internal capacitances), and thermal performance graphs. It is perfectly suited for engineers designing high-efficiency switched mode power supplies and active power factor correction systems requiring robust, reliable switching components.

📄 Preview PAGE OF 7

Page 1 Text Content

查询FDPF44N25供应商 FD PF44N 25 250V N -C hannel M SFET

Uni FET

FDPF44N25 250V N-Channel MOSFET Features Description 18A, 250V, RDS(on) = 0.069Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-

Low gate charge ( typical 47 n C) tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Low Crss ( typical 60 p F)

Fast switching This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor-

100% avalanche tested

mance, and withstand high energy pulse in the avalanche and

Improved dv/dt capability

commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction.

TO-220F

FDPF Series

Absolute Maximum Ratings Symbol Parameter FDPF44N25 Unit VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 10.8

IDM Drain Current - Pulsed (Note 1)

VGSS Gate-Source voltage ±30

EAS Single Pulsed Avalanche Energy (Note 2) m J

IAR Avalanche Current (Note 1)

EAR Repetitive Avalanche Energy (Note 1) 5.6 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.45 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case 2.23 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com FDPF44N25 Rev A

Page Summary Contents For Fairchild FDPF44N25 Data Handbook

Page 1 查询FDPF44N25供应商 FD PF44N 25 250V N -C hannel M SFET Uni FET FDPF44N25 250V N-Channel MOSFET Features Description 18A, 250V, RDS(on) = 0.069Ω @VGS = 10 V These N-Channel enhancement mode power field eff...
Page 2 FD PF44N 25 250V N -C hannel M SFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDPF44N25 FDPF44N25T TO-220F Potting Type FDPF44N25 FDPF44N25 T...
Page 3 FD PF44N 25 250V N -C hannel M SFET Typical Performance Characteristics , D ra in ur re nt [A ap ac ita nc es [p F] S( ) [ ra in -S ou rc n- es is ta nc Figure 1. On-Region Characteristics Figure 2. T...
Page 4 FD PF44N 25 250V N -C hannel M SFET Typical Performance Characteristics (Continued) BV SS , ( or al iz ed , D ra in ur re nt [A ra in -S ou rc Br ea kd ow Vo lta ge Figure 7. Breakdown Voltage Variati...
Page 5 FD PF44N 25 250V N -C hannel M SFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.fairchildsem...
Page 6 FD PF44N 25 250V N -C hannel M SFET Peak Diode Recovery dv/dt Test Circuit & Waveforms www.fairchildsemi.com FDPF44N25 Rev A
Page 7 FD PF44N 25 250V N -C hannel M SFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive lis...

Manual Details

Brand Fairchild
Pages 7
File Size 840.52 KB
Published July 06, 2026
1 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What is the maximum continuous Drain Current at room temperature?

The continuous drain current (Idc) is 18 A at T = 25°C.

How do I calculate power dissipation if my operating temperature increases above 25°C?

You must derate the power usage using a factor of 0.45 W/°C.

What is the typical On-Resistance (Rds(on)) of this MOSFET?

The typical drain-source on-resistance (Rds(on)) is 0.069 Ohms at V = 10V, I = 9A.

What types of applications are these devices best suited for?

They are well suited for high efficiency switched mode power supplies and active power factor correction.