Fairchild FDP6670S FDB6670S Data Handbook
Summary
Discover the FDP6670S/FDB6670S, a professional-grade 30V N-Channel Power Trench SyncFET MOSFET designed for high-efficiency DC-DC power conversion circuits. This advanced component features integrated Schottky body diode technology and unmatched low on-resistance (R_DS(on)), allowing it to function as a premium low-side switch in synchronous rectifiers. The accompanying datasheet provides comprehensive technical specifications, including detailed thermal, switching, and electrical characteristics crucial for electronic designers integrating this reliable, high-power MOSFET into demanding power supplies.
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查询FDB6670S供应商
6670S /F 6670S September 2001
FDP6670S/FDB6670S 30V N-Channel Power Trench Sync FET™
General Description Features
This MOSFET is designed to replace a single MOSFET
• 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V
and parallel Schottky diode in synchronous DC:DC
RDS(ON) = 12.5 mΩ @ VGS = 4.5 V
power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDP6670S includes • Includes Sync FET Schottky body diode
an integrated Schottky diode using Fairchild’s monolithic Sync FET technology. The performance of • Low gate charge (23n C typical) the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the • High performance trench technology for extremely performance of the FDP6670A/FDB6670A in parallel
low RDS(ON) and fast switching
with a Schottky diode.
• High power and current handling capability
TO-220 TO-263AB
FDP Series FDB Series
Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1) 62 A – Pulsed (Note 1) 150 PD Total Power Dissipation @ TC = 25°C 62.5 W Derate above 25°C 0.5 W/°C TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6670S FDB6670S 13’’ 24mm 800 units FDP6670S FDP6670S Tube n/a 45
2001 Fairchild Semiconductor Corporation FDP6670S/FDB6670S Rev E(W)
Page Summary Contents For Fairchild FDP6670S FDB6670S Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 6 |
| File Size | 87.41 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the primary application benefit of this MOSFET?
It is designed to maximize efficiency in synchronous rectifiers due to its integrated Schottky body diode and low gate charge.
What are the absolute maximum voltage and drain current ratings?
The Drain-Source Voltage (DSS) rating is 30V, and the continuous Drain Current (D) rating is 62A.
How does this component perform thermally in applications?
It has a Thermal Resistance (Junction-to-Case) of 2.1 °C/W, and Junction-to-Ambient resistance of 62.5 °C/W.
What is the safe operating temperature range?
The Operating and Storage Junction Temperature Range is wide, spanning from –55°C to +150°C.