Fairchild FDP6670AS FDB6670AS Data Handbook

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FD P6670A S/FD 6670A January 2005

FDP6670AS/FDB6670AS 30V N-Channel Power Trench® Sync FET™ General Description Features This MOSFET is designed to replace a single MOSFET

• 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V

and parallel Schottky diode in synchronous DC:DC

RDS(ON) = 10.5 mΩ @ VGS = 4.5 V

power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

RDS(ON) and low gate charge. The FDP6670AS • Includes Sync FET Schottky body diode

includes an integrated Schottky diode using Fairchild’s

monolithic Sync FET technology. The performance of • Low gate charge (28n C typical)

the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the • High performance trench technology for extremely performance of the FDP6670A/FDB6670A in parallel

low RDS(ON) and fast switching

with a Schottky diode.

• High power and current handling capability

TO-220 TO-263AB

FDP Series FDB Series

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous 62 A – Pulsed (Note 1) 150 PD Total Power Dissipation @ TC = 25°C 62.5 W Derate above 25°C 0.5 W/°C TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C TL Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds 275 °C

Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6670AS FDB6670AS 13’’ 24mm 800 units FDB6670AS FDB6670AS_NL (Note 3) 13’’ 24mm 800 units FDP6670AS FDP6670AS Tube n/a 45 FDP6670AS FDP6670AS_NL (Note 4) Tube n/a 45

©2005 Fairchild Semiconductor Corporation FDP6670AS/FDB6670AS Rev A(X)