Fairchild FDP6644 FDB6644 Data Handbook

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FD P6644/FD

June 2001

FDP6644/FDB6644 30V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed

• 50 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 10.5 mΩ @ VGS = 4.5 V

converters using either synchronous or conventional switching PWM controllers.

• Low gate charge (27 n C typical)

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Fast switching speed RDS(ON) specifications.

• High performance trench technology for extremely

The result is a MOSFET that is easy and safer to drive

low RDS(ON)

(even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

• 175°C maximum junction temperature rating

TO-220 TO-263AB

FDP Series FDB Series

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ± 16 ID Drain Current – Continuous (Note 1)

– Pulsed (Note 1)

PD Total Power Dissipation @ TC = 25°C

Derate above 25°C 0.55 W/°C

TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C

Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 1.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6644 FDB6644 13’’ 24mm 800 units FDP6644 FDP6644 Tube n/a

2001 Fairchild Semiconductor Corporation FDP6644 Rev C(W)